نتایج جستجو برای: thermal work limit
تعداد نتایج: 1307217 فیلتر نتایج به سال:
Now-a-days, demand for electric power has shown steady but geographically uneven growth.The wheeling of the available energy through existing long ac lines to load centers has a certain upper limit due to stability considerations. Thermal limit is the major limit to be considered while increasing loadability of existing EHV long transmission lines. Thus, these lines cannot be loaded to their th...
The aging of insulating materials can be estimated by an electrical breakdown occurring in electrical components so that the relationship between lifetime, failure probability and reliability of electrical components may be studied using the life models in high voltage cables networks. In last decades with attention to higher features as electrical, thermal, mechanical characteristic, widely cr...
Packaging protects food products from environmental influences, assuring quality and safety throughout shelf life if properly performed. Packaging quality depends on the quality of the packaging material and of the closure or seal. A common problem possibly jeopardizing seal quality is the presence of seal contamination, which can cause a decreased seal strength, an increased packaging failure ...
Measurements of ultrasound speed and attenuation can be related to the properties of dispersed systems by applying a scattering model. Rayleigh's method for scattering of sound by a spherical object, and its subsequent developments to include viscous, thermal, and other effects (known as the ECAH model) has been widely adopted. The ECAH method has difficulties, including numerical ill-condition...
The photoacoustic (PA) technique is one of many techniques for measuring thermal conductivity of thin films. Compared with other techniques for thermal conductivity measurement, the photoacoustic method is relatively simple, yet is able to provide accurate thermal conductivity data for many types of thin films and bulk materials. In this work, the PA measurement in a high frequency range is mad...
When pushing the gate dielectric thickness of metal-oxide-semiconductor (MOS) devices down to the subnanometer scale, the most challenging issue is the interface. The interfacial transition layers between the high-k dielectric/Si and between the high-k dielectric/gate metal become the critical constraints for the smallest achievable film thickness. This work presents a detailed study on the int...
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