نتایج جستجو برای: thin film behaves as a semiconductor
تعداد نتایج: 14062177 فیلتر نتایج به سال:
We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge...
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes successful operation. In recent years, major milestone was reached: OFET made to successfully operate inversion-mode first time. Here, we develop pulsed bias te...
We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface...
We studied various electrical and optical properties of Europium (1 atomic %) incorporated BaTiO3 film on n-Si(100) substrate. The thin film structure was analyzed by X-ray diffraction. Film thickness and optical refractive index were measured with an ellipsometer. P-E hysteresis measurement shows the remnant polarization of 37μC/cm in BaTiO3:Eu film. C-V measurements on the pure BaTiO3 film sh...
A π-conjugated polyazine containing diketopyrrolopyrrole (DPP) moiety, PDBTAZ, is synthesized through a simple condensation polymerization. PDBTAZ is found to be a high-performance ambipolar semiconductor in organic thin film transistors (OTFTs), showing an electron mobility of up to 0.41 cm(2) V(-1) s(-1) and a hole mobility of up to 0.36 cm(2) V(-1) s(-1).
An anthracene derivative, 2,6-diphenyl anthracene (DPA), was successfully synthesized with three simple steps and a high yield. The compound was determined to be a durable high performing semiconductor with thin film device mobility over 10 cm(2) V(-1) s(-1). The efficient synthesis and high performance indicates its great potential in organic electronics.
Organic-based flexible dielectric films with high permittivity (e) are desirable for future applications of organic thin-film transistors, such as smartcards and radio frequency identification (RFID) tags, that concurrently desire flexible or conformable substrates. Advances in the development of all-polymer field-effect transistors (PFETs) have been particularly significant for their potential...
A method of obtaining high sensitivity and precision in x-ray fluorescence analysis using semiconductor detector spectrometers is discussed. Monoenergetic exciting radiation is employed to generate characteristic x-rays from trace elements in thin, uniform specimens. Corrections for absorption effects are determined; enhancement effects are omitted as they are negligible for many thin specimens...
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