Degradation phenomena due to hot carrier stress conditions were investigated in double-gate polysilicon thin film transistors fabricated by sequential lateral solidification (SLS). We varied the hot carrier stress conditions at the front gate channel by applying various voltages at the back-gate. Thus, we investigated the device electrical performance under such stress regimes. As a conclusion,...

We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to∼95cmVs, as well as transparent and conductive patterns, with∼80% transmittance and∼30kΩ/ sheet resistance. This paves the way to all-print...

phthalocyanine thin film transistors Jeongwon Park, James E. Royer, Corneliu N. Colesniuc, Forest I. Bohrer, Amos Sharoni, Sungho Jin, Ivan K. Schuller, William C. Trogler, and Andrew C. Kummel Materials Science and Engineering Program, University of California, San Diego, 9500 Gilman Drive, La Jolla, California 92093, USA Department of Chemistry and Biochemistry, University of California, San ...

In this study, the mobility enhancement in an Amorphous Oxide Semiconductor Thin Film Transistor (AOS TFT), particularly the effect of enhanced-mobility current path was investigated. In the TFT structure, the a-IGZO single active channel layer was replaced by double layers. Indium Tin Oxide (ITO) was employed as an enhanced-mobility current path material and was embedded in an amorphous Indium...

We present a method of extracting the field-effect mobility from the transfer characteristics of organic polymer thin-film transistors (OP-TFTs), in both the linear and saturation regimes, by accounting for the dependence of the mobility on the gate bias, which translates to a dependence on the accumulated density of majority charge carriers in the channel. This method is compared to the common...

The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is...

Hydrogenated nanocrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition has been incorporated as the active layer in bottom-gate thin-film transistors. These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to p...

A generic analytical model for the current–voltage characteristics of organic thin-film transistors (OTFTs) is derived. Based on this generic model, a TFT compact dc model that meets the requirements for compact modeling, including for computer circuit simulators, is proposed. The models are fully symmetrical, and the TFT compact dc model covers all regimes of TFT operation—linear and saturatio...

coupling. In these GBJJ, the grain boundary which Since the discovery of High Tc Superconductivity constitutes the barrier is a weak superconducting at the end of 1986 [1], great attention has been paid region which is oxygen deficient andyor disordered. to the investigation of the action of light on High Tc Then, illumination of such junctions will change the Superconductors (HTSC). Besides th...

Thin nets are the lines where the grey level function is locally extremum in a given direction. Recently, we have shown that it is possible to characterize the thin nets using diierential properties of the image surface. However, the method failed when these structures present diierent widths. In this paper we show that, the extraction process of the thin nets, having diierent width, requires a...