نتایج جستجو برای: tin
تعداد نتایج: 16679 فیلتر نتایج به سال:
A review is presented describing the development of TiN-CVD from the classical, high temperature T iClm2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production faci...
Absolute sputtering yields of liquid tin from 240 to 420 C due to irradiation by low-energy helium and deuterium have been measured. For ion energies ranging from 300 to 1000 eV, temperature enhancement of liquid tin sputtering was noted. These measurements were obtained by IIAX (the Ion-surface InterAction eXperiment) using a velocityfiltered ion beam at 45 incidence to sputter material from a...
We describe an adaptive network, TIN2, that learns the transition function of a sequential system from observations of its behavior. It integrates two subnets, TIN-I (Winter, Ryan and Turner, 1987) and TIN-2. TIN-2 constructs state representations from examples of system behavior, and its dynamics are the main topics of the paper. TIN-I abstracts transition functions from noisy state representa...
The synthesis feasibility of silicon-tin nanocrystals by discharges in liquid nitrogen is studied using a Si-10 at % Sn sintered electrode. Time-resolved optical emission spectroscopy shows that silicon and tin melt almost simultaneously. The presence of both vapours does not lead to the synthesis of alloyed nanocrystals but to the synthesis of separate nanocrystals of silicon and tin with aver...
Discharge sources in tin vapor have recently been receiving increased attention as candidate extreme ultraviolet (EUV) light sources for application in semiconductor lithography, because of their favorable spectrum near 13.5 nm. In the ASML EUV laboratory, time-resolved pinhole imaging in the EUV and two-dimensional imaging in visible light have been applied for qualitative characterization of ...
Self-cleansing of transition metal nitrides is discovered to take place during ultrahigh vacuum annealing of TiN, NbN, and VN thin films. Native oxide layers from air exposure disappear after isothermal anneal at 1000 °C. Also, for TiN, the Ti 2p and N 1s X-ray photoelectron spectra (XPS) recorded after the anneal are identical to those obtained from insitu grown and analyzed epitaxial TiN(001)...
A resin-phase extraction method has been optimized for the trace determination of tin(II) by ETAAS. Tin(II) was extracted on a finely divided anion exchange resin as the complex with ammonium pyrrolidinedithiocarbamate (APDC). The resin was collected on a membrane filter and then dispersed in 1.00 ml of 1 mol l(-1) nitric acid containing 100 microg of Pd(II) and 60 microg of Ni(II). The resulti...
Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T(c) of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and ...
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