نتایج جستجو برای: tunnel injection quantum dot tiqd

تعداد نتایج: 497752  

Journal: :Science 2002
Zhiliang Yuan Beata E Kardynal R Mark Stevenson Andrew J Shields Charlene J Lobo Ken Cooper Neil S Beattie David A Ritchie Michael Pepper

Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is shown to act as an electrically driven single-photon source. At low injection currents, the dot electroluminescence spectrum reveals a single sharp line due to exciton recombination, while another line due to the biexciton emerges at higher currents. The second-order correlation function of the diod...

Journal: :Nature communications 2012
M T Allen J Martin A Yacoby

Quantum-confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum-confined structures in suspended bilayer graphene with tunnel barriers ...

2008
S. Bandyopadhyay

Quantum computers promise vastly enhanced computational power and an uncanny ability to solve classically intractable problems. However, few proposals exist for robust, solid state implementation of such computers where the quantum gates are sufficiently miniaturized to have nanometer-scale dimensions. Here I present a new approach whereby a complete computer with nanoscale gates might be self-...

2007
A. Yu. Smirnov S. Savel’ev L. G. Mourokh Franco Nori

We propose the use of semiconductor quantum dots for simulating chemical reactions, as electrons are redistributed among such artificial atoms. We show that it is possible to achieve various reaction regimes and obtain different reaction products by varying the speed of voltage changes applied to the gates forming quantum dots. Considering the simplest possible reaction, H2 +H→H+H2, we show how...

2016
Yoshitaka Okada Yasushi Shoji

Advanced concepts for high efficiency solar cells such as hot carrier effects, Multi-Exciton Generation (MEG), and Intermediate-Band (IB) absorption in low-dimensional nanostructures are under focused research topics in recent years. Among various potential approaches, this chapter is devoted to the device physics and development of the state-of-the-art technologies for quantum dot-based IB sol...

Journal: :Nature communications 2013
Saniya Deshpande Junseok Heo Ayan Das Pallab Bhattacharya

In a classical light source, such as a laser, the photon number follows a Poissonian distribution. For quantum information processing and metrology applications, a non-classical emitter of single photons is required. A single quantum dot is an ideal source of single photons and such single-photon sources in the visible spectral range have been demonstrated with III-nitride and II-VI-based singl...

Quantum dot cellular automata (QCA) introduces a pioneer technology in nano scale computer architectures. Employing this technology is one of the solutions to decrease the size of circuits and reducing power dissipation. In this paper, two new optimized FlipFlops with reset input are proposed in quantum dot cellular automata technology. In addition, comparison with related works is performed.Th...

2000
Lucjan Jacak L Jacak

A short overview of the technology and physics of semiconductor quantum dots is given. Different methods of creation of quantum dots and mechanisms of carrier confinements are described. The fundamental properties of these systems are discussed including current attempts for applications in new ultra-small opto-electronic semiconductor devices.

Journal: :Optics express 2015
Cheng Wang Mohamed E Chaibi Heming Huang Didier Erasme Philip Poole Jacky Even Frédéric Grillot

Combining theoretical and experimental studies show that optical injection strongly changes the behavior of the linewidth enhancement factor (α(H)-factor) and the FM-to-AM indices ratio (FAIR) in quantum dash/dot semiconductor lasers. In contrast to solitary lasers, both the α(H)-factor and the FAIR at low-frequency modulation are reduced by optical injection. At high modulation frequency, howe...

Mahmoud Samadpour, Mehdi Molaei

CdSe quantum dots were in situ deposited on various structures of TiO2 photoanode by successive ionic layer adsorption and reaction (SILAR). Various sensitized TiO2 structures were integrated as a photoanode in order to make quantum dot sensitized solar cells. High power conversion efficiency was obtained; 2.89 % (Voc=524 mV, Jsc=9.78 mA/cm2, FF=0.56) for the cells that sensitized by SILAR meth...

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