We have designed and built an optical system to collect light that is generated in the tunneling region of a low-temperature scanning tunneling microscope. The optical system consists of an in situ lens placed approximately 1.5 cm from the tunneling region and an ex situ optical lens system to analyze the emitted light, for instance, by directing the light into a spectrometer. As a demonstratio...

We investigate tunneling induced nonlinear absorption phenomena in a coupled quantum-dot system. Resonant tunneling causes constructive interference in the nonlinear absorption that leads to an increase of more than an order of magnitude over the maximum absorption in a coupled quantum dot system without tunneling. Resonant tunneling also leads to a narrowing of the linewidth of the absorption ...

We study the Coulomb blockade of tunneling through a double quantum dot. The temperature dependence of the linear conductance is strongly affected by the interdot tunneling. As the tunneling grows, a crossover from temperature-independent peak conductance to a power-law suppression of conductance at low temperatures is predicted. This suppression is a manifestation of the Anderson orthogonality...

– CrO2 thin films, with crystallites of several microns size, provide the opportunity for the investigation of the intergrain tunneling between a few crystals separated by a 1–2 nm thick Cr2O3 film. A pronounced zero-bias anomaly of the conductance is found at low temperatures. Combined photoemission and inverse photoemission temperature-dependent studies confirm the occurrence of Coulomb block...

The influence of a magnetic field on the tunneling of an electron out of a confining plane is studied by a path integral method. We map this 3-d problem on to a 1-d one, and find that the tunneling is strongly affected by the field. Without a perpendicular field the tunneling at zero temperature can be completely suppressed by a large parallel field, but in the small parallel field and low temp...

The Tunneling-Dielectric TFT (TDTFT), that has thin dielectric films at both ends of the channel fabrication area, was fabricated with 1.7 nm SiNX film by LPCVD method. The conduction mechanism of the drain currents was examined in the temperatures from 293 to 623 K experimentally and theoretically. The Id-Vg characteristics were reproduced by the direct tunneling (DT) via SiNX film with an ass...

Utility construction projects have great opportunities for simulation applications in construction. This paper describes the special purpose tunneling simulation template developed based on the tunneling operations performed at the City of Edmonton Public Works Department for shielded tunnel boring machines. The tunneling operations are described, then the tunnel template and its components are...

We study the effects of phonons on the tunneling of an atom between two surfaces. In contrast to an atom tunneling in the bulk, the phonons couple very strongly and qualitatively change the tunneling behavior. This is the first example of Ohmic coupling from phonons for a two-state system. We propose an experiment in which an atom tunnels from the tip of an scanning-tunneling microscope, and sh...

We measure electron tunneling via discrete energy levels in ferromagnetic cobalt particles that are less than 4 nm in diameter, using nonmagnetic electrodes. Because of magnetic anisotropy, the energy of each tunneling resonance shifts as an applied magnetic field rotates the particle’s magnetic moment. We see both spin-increasing and decreasing tunneling transitions, but do not observe the spi...

We study the calculation of quasi-bound states in nMOS inversion channels and their impact on direct tunneling currents through the dielectric layer. For typical device parameters, the gate leakage in inversion is dominated by this tunneling component. However, a strong inaccuracy arises, if the eigenvalues of the closed system are used for the quasi-bound state tunneling current. We propose si...