The matrix elements of the XH, rotation-tunneling Hamiltonian are given for basis states with all of the vibrational excitation in a single bond. A basis set of symmetrized rovibrational wave functions is given that are eigenfunctions in the limit in which the local mode tunneling rate is much smaller than the rotational precession rate. Using this basis, it is demonstrated that, in this limit,...

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the A...

Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass, and monolayer-thin body. In this work, we examine the device physics of p-i-n GNR tunneling FETs using atomistic q...

We study the effect of backward scatterings in the tunneling at a point contact between the edges of a second level hierarchical fractional quantum Hall states. A universal scaling dimension of the tunneling conductance is obtained only when both of the edge channels propagate in the same direction. It is shown that the quasiparticle tunneling picture and the electron tunneling picture give dif...

It is shown that the tunneling effect in quantum cosmology is possible not only at the very beginning or the very end of the evolution, but also at the moment of maximum expansion of the universe. A positive curvature expanding Friedmann universe changes its state of evolution spontaneously and completely, without any changes in the matter content, avoiding recollapse, and falling into oscillat...

Spin polarized current is of significant importance both scientifically and technologically. Recent advances in film growth and device fabrication in spintronics make possible an entirely new class of spin-based devices. An indispensable element in all these devices is the magnetic tunnel junction (MTJ) which has two ferromagnetic electrodes separated by an insulator barrier of atomic scale. Wh...

Tunneling anisotropic magnetoresistance in a magnetic tunnel junction with half-metallic electrodes" (2016). Evgeny Tsymbal Publications. 53. Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel junction due to a change in magnetization direction of one or both magnetic electrodes with respect to the flow of current. We present the results of first...

Understanding the correlation between film structure and its ferromagnetic properties is very important for applications. To this end, we have investigated epitaxial and smooth Ni films grown on MgO substrates using molecular beam epitaxy (MBE) and dc sputtering. To establish correlation between film morphology and structure with magnetic properties, we have used in situ and ex situ scanning tu...

The phenomenon of photon tunneling, which depends on evanescent waves for radiative transfer, has important applications in microscale energy conversion devices and nearfield optical microscopy. In recent years, there has been a surge of interest in the socalled negative index materials (NIMs), which have simultaneously negative electric permittivity and negative magnetic permeability. The pres...

The combination of silicon-on-insulator (SOI) substrates with ultrathin Si and insulator layers opens new opportunities for quantum effect and hot-electron devices. Unlike their III–V predecessors, these devices have the crucial advantage of potential integrability with dominant silicon technology. We discuss three examples of such SOI devices: a three-terminal real-space transfer transistor wi...