Semiconductor ionic electrolytes, especially heterostructure composites, have a significant role in enhancing oxide ion conductivity and peak power density (PPD) because of their interfacial contact. In this work, the fluorite structure CeO2 spinel-based CoAl2O4 samples, as composite electrolyte, are successfully fabricated. The p-type n-type (CeO2-CoAl2O4) used an electrolyte exhibits cell per...

We investigate the performances of 18 nm gate length AlInN/GaN, InP/InGaAs heterostructure and a Silicon double gate MOSFET, using 2D Sentaurus TCAD simulation. The heterostructure device uses lattice-matched wideband Al0.83In0.17N /InP and narrowband GaN / In0.53Ga0.47As layers, along with high-k Al2O3 as the gate dielectric, while silicon based device uses SiO2 gate dielectric. The device has...

Two dimensional van der Waals heterostructures have shown promise in electronic device applications because of their high charge carrier mobility, large surface area and large spin conductance value. However, it still remains a great challenge to design heterolayers with an electric field driven tunable electronic bandgap and stable geometry to obtain high electron mobility. Motivated by the in...

Development of lift-off technique AlGaAs/GaAs- heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au-In compound has been carried out. Forming process frontal ohmic contact n-type conductivity based on systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific resistance (2-5)·10 -6 Ω·cm 2 investigated. Analyzed was influence hetero...

With advent of the ubiquitous network era and due to recent progress of III-V nanotechnology, the present III-V heterostructure microelectronics will turn into what one might call III-V heterostructure nanoelectronics, and may open up a new future in much wider application areas than today, combining information technology, nanotechnology and biotechnology. Instead of the traditional top-down a...

The emergence of two-dimensional metallic states at the LaAlO3/SrTiO3 (LAO/STO) heterostructure interface is known to occur at a critical thickness of four LAO layers. This insulator to-metal transition can be explained through the "polar catastrophe" mechanism arising from the divergence of the electrostatic potential at the LAO surface. Here, we demonstrate that nanostructuring can be effecti...

Well-crystallized Sn2S3 semiconductor thin films with a highly (111)-crystallographic orientation were grown using RF sputtering. The surface morphology of the Sn2S3 thin films exhibited a sheet-like feature. The Sn2S3 crystallites with a sheet-like surface had a sharp periphery with a thickness in a nanoscale size, and the crystallite size ranged from approximately 150 to 300 nm. Postannealing...

Apatite minerals of I-type Zouzan granitoids and typical garnet-bearing S-type granites have been analyzed by electron microprobe to define trace element concentrations and compare them in different granites. Zouzan granites are composed of apatites with lower Fe, Mn, Na and HREE and higher REE and ∑REE relative to S-type ones. Trace elements abundances of apatite often vary with some parameter...