The MOSFET (Metal-Oxide-Silicon Field-EffectTransistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying and switching functions between three electrical terminals (input, output and common) connected to the film. This principle was first propos...

A voltage-controlled negative-differential-resistance device using a merged integrated circuit of two n-channel enhancement-mode MOSFETs and a vertical NPN bipolar transistor, called vertical Lambda-bipolar-transistor (VLBT), is presented for memory application. The new VLBT structure has been developed and its characteristics are derived by a simple circuit model and device physics. A novel si...

The first experimental study of a new nanometer field-effect transistor with a single barrier in its one-dimensional channel is presented. At low temperatures and as charge density in the channel was varied, nine reproducible periodic oscillations of conductance, in addition to 2e2/h conductance plateaus, were observed before the onset of the first 2e’/h conductance plateau. It was found experi...

An optimum OTA topology is done in order to optimize MOS transistor sizing.Also, the design of folded cascode OTA, which works for frequencies that lead to a base band circuit design for RF application, is based on transistor sizing methodology. Simulation results are performed using SPICE software and BSIM3V3 model for CMOS 0.18μm process, show that the designed folded cascode OTA has a 52dB D...

Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD are presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibra...

This paper proposes and demonstrates the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor gain factor from the measurement of the small-signal source-drain conductance of a transistor as a function of dc gate bias with zero dc drain bias. The theory is based on the analytical model that includes the effects of source-drain res...

To extract the immunity model in an easy way and to complete the immunity simulation in a short time, it is preferred to consider only the disturbance propagation network in an integrated circuit system. However, through theoretical analyses, simulations and measurements, this paper shows that the on-chip transistor circuit has a nonuniform frequency response on its immunity against arrival dis...

Scattering parameters (S-parameters) were first mentioned in articles and textbooks in the 1950s and 1960s by Matthews, Collins and Kurokawa and popularized by the release of Hewlett Packard’s first network analyzers in the 1960s. Since then, S-parameters have been used to describe the complex characteristics of a network by quantifying the RF power flowing between its ports. S-parameters are e...