We derive an expression for the input complex impedance of a Sallen-Key second-order low-pass filter of unity gain as a function of the natural frequency , o  quality factor Q and the ratio of the resistors of the filter. From this expression, it is shown that the filter behaves like a single capacitor for low frequencies and as a single resistor at high frequencies. Furthermore, the minimum i...

In this work, new oscillator topologies based on a recently introduced active element, namely inverting second-generation current conveyor, are presented. This recently introduced unity gain based active element is suitable for integrated circuit realization and can easily be implemented with CMOS technology. Considering this fact, basic oscillator topologies employing a single, two and three c...

We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the parameters both gate voltage and frequency is precisely validated by high-frequency (up to 18 GHz) on-wafer measurements from 300 nm device. These are studied simultaneously, in contrast other works which focus exclusively f...

We demonstrate III–V compound semiconductor (GaAs, InGaAs, and GaN) based metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 high-permittivity (high-k) gate dielectric, deposited by atomic layer deposition (ALD). These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, high dielectric breakdown strength, a high s...

Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...

Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73V. A cut-off frequency fT of 113GHz and maximum oscillation frequency fmax of 230GHz were achieved. The output powe...

This article describes an integrated dualband multi-mode wireless LAN radio frequency power amplifier (Infineon PMB 8825) for 2.45 GHz and 5.25 GHz. The device has been realized in a 42 GHz-fT, 0.35μm SiGe-Bipolar high volume technology. The chip features two single-ended 3-stage power amplifiers for each frequency band and a control section that includes band select, standby and power control ...

This paper presents an electronically tunable current/voltage mode universal biquad filter using current controlled current conveyor transconductance amplifiers (CCCCTAs). The proposed filter employs only two CCCCTAs and two grounded capacitors. The proposed filter can simultaneously realize low pass (LP), band pass (BP) and high pass (HP) responses. Realization of band reject (BR) and all pass...

We report a simple technique to suppress high-frequency phase noise of a Yb-based fiber optical frequency comb using an active intensity noise servo. Out-of-loop measurements of the phase noise using an optical heterodyne beat with a cw laser show suppression of phase noise by ≥7 dB out to Fourier frequencies of 100 kHz with a unity-gain crossing of ∼700 kHz. These results are enabled by the st...