Aerosol-assisted chemical vapour deposition (AACVD) of Cd[(SePiPr2)2N]2 is shown to deposit cadmium selenide and/or cadmium phosphide on glass substrates, depending upon the growth conditions. The phase, structure, morphology and composition of the films were characterised by X-ray powder diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis and X-ray photoelectron s...

The low pressure (20 mbar) organometallic vapour phase epitaxy (LP-OMVPE) of GaAs/GalnP in asymmetric grooves, patterned on (111)B GaAs substrates, has been examined. One of the characteristic features of this deposition is that facets develop along the top edges where the side wall planes meet the top surface. The origin of small facets at the top edge appears to be due to pre-growth condition...

The use of a tantalum wire in Hot-Wire Chemical Vapour Deposition has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550oC). A transition in crystalline preferential orientation from (220) to (111) was observed around 1700oC. Transmission Electron Microscopy images, together with Secondary Ion Mass Spectrometry measurements, suggested that no oxidation oc...

In this paper we discuss results of MgB2 thin films deposition for the hot-electron bolometer (HEB) application. For this purpose a custom made hybrid physical-chemical vapour deposition (HPCVD) system was built. For films thicknesses d in the 15-45nm range the critical temperatures were from 34K to 40K. For bridges as narrow as 500nm the critical current density was >107A/cm2 indicating a high...