One of the challenges to utilize high performance III-V compound semiconductor nanowires (NWs) for large-scale technological applications is to control the crystal phase and growth orientation for homogenous nanowire properties. Here, we report the dependence of crystal structure and growth orientation of GaAs NWs on NixGay seeds via vapor-solid-solid mechanism. The crystal structure of catalyt...

The applications of supported metal catalysts vary widely, from selective hydrogenation in the fine chemicals industry to the control of vehicle emissions. Yet many basic questions about the structure, activity, and durability of these catalysts remain unanswered. For example, there is still much uncertainty about the mechanism of metal particle growth, or sintering, which is a major cause of c...

Reliable chemical vapour deposition (CVD) of transition metal dichalcogenides (TMDs) is currently a highly pressing research field, as numerous potential applications rely on the production of high quality films on a macroscopic scale. Here, we show the use of liquid phase exfoliated nanosheets and patterned sputter deposited layers as solid precursors for chemical vapour deposition. TMD monola...

We investigate p-type GaN : Mg materials using noise spectroscopy. The epitaxial Mg-doped GaN layers were grown on a sapphire substrate by metalorganic chemical vapour deposition. Significant generation–recombination noise is observed and shown to be linked to metastable DX-like centres. We correlate these centres with metastable defects with optical ionization energies 1.1 eV and 1.9 eV, respe...

The effects of growth rate (Gr), deposition temperature (Td), film thickness (tF ), and substrate induced strain (ǫ) on morphological, crystallographic and magnetic characteristics of equiatomic CoPt epitaxial films synthesized with pulsed laser deposition (PLD) are investigated. The (001) oriented single crystal substrates of MgO, SrTiO3 and LaAlO3 provide different degree of epitaxial strain ...

The epitaxial growth of metastable fcc Mn thin films on a GaAs(001) surface has been achieved at a substrate temperature of 400 K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electronic density of states below the Fermi edge of the bulk fcc Mn phase is measured experimentally. A significant difference of the elec...

Using a previously shown method, we prepared 2”-GaN wafers as templates for a self separation process. Self separation is happening during cooldown after growing thick layers of GaN in our hydride vapor phase epitaxy (HVPE) reactor. Our templates consist of GaN grown by metalorganic vapor phase epitaxy (MOVPE) directly on sapphire. These GaN layers are masked with 200nm of SiN that are structur...