نتایج جستجو برای: voltage stability margin enhancement

تعداد نتایج: 554331  

Journal: :IEICE Electronics Express 2022

A fully integrated output capacitor, MOS-only reference, 55mnm low-dropout regulator (LDO) with optimized area and power is proposed in this letter for system-on-chip (SoC) self-powered Internet of Things (IoT) applications. The small capacitor saves both cost, but brings challenges to the system’s stability transient response. In order improve system area, a dynamic attenuation buffer along ne...

2011
S. Sakthivel R. Vetrivel V. Senthamarai Kannan

A power system, under heavily loaded conditions, is at high risks of probable line outage and consequent voltage instability problem. Real power loss and voltage deviation minimization are reliable indicators of voltage security of power networks. This paper proposes a Particle Swarm Optimization (PSO) based optimal location and sizing of Static Var Compensator (SVC) to improve voltage stabilit...

2014
Rekha Chaudhary Arun Kumar Singh

This paper presents the design of a non-linear controller to prevent an electric power system losing synchronism after a large sudden fault and to achieve good post fault voltage level. By Direct Feedback Linearization (DFL) technique robust non-linear excitation controller is designed which will achieve stability enhancement and voltage regulation of power system. By utilizing this technique, ...

Journal: :نشریه دانشکده فنی 0
امیر پیروز قلعه دانشگاه تهران مجید صنایع پسند دانشگاه تهران حامد اسدی دانشگاه تهران

power system blackouts have become a serious problem for electric utilities especially in recent years. different forms of system instability have emerged in recent blackouts, such as voltage instability and frequency instability. to counteract each form of system instability, special algorithms have been designed in the protection system, e.g. under frequency load shedding (ufls) and under vol...

2010
Debasis Mukherjee

This paper presents the different types of analysis such as noise, voltage, read margin and write margin of Static Random Access Memory (SRAM) cell for high-speed application. The design is based upon the 0.18 μm CMOS process technology. Static Noise Margin (SNM) is the most important parameter for memory design. SNM, which affects both read and write margin, is related to the threshold voltage...

Improving transient voltage stability is one of the most important issues that must be provided by doubly fed induction generator (DFIG)-based wind farms (WFs) according to the grid code requirement. This paper proposes adjusted DC-link chopper based passive voltage compensator and modified transient voltage controller (MTVC) based active voltage compensator for improving transient voltage stab...

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