The thermal, electrical and thermoelectric properties of ZnO– Me x O y ceramics with 1 ≤ , 3, where = Al, Co, Fe, Ni, Ti, have been studied. specimens synthesized using the ceramic sintering technology from two or more oxides in an open atmosphere annealing temperature time variation. structural phase data on shown that post-synthesis addition doping powders to wurtzite-structured ZnO powder ca...

The growth of Eu-doped GaN (GaN:Eu) films has been performed on GaAs (100) substrates using RF magnetron sputtering method. The GaN layers exhibit a wurtzite structure. Substrate temperature and the pressure during the deposition do not influence the orientation of GaN:Eu films. After annealing of GaN films in NH3, a strong red luminescence at 622 nm due to Eu ions has been observed.

Stable crystal structures of wurtzite and recently discovered rhombohedral polymorphs boron phosphide were obtained based on chemistry rationale unconstrained geometry optimization calculations within density functional theory.