نتایج جستجو برای: نانوپوسههای mos2

تعداد نتایج: 4787  

2011
Maja Remskar Ales Mrzel Marko Virsek Matjaz Godec Matthias Krause Andreas Kolitsch Amol Singh Alan Seabaugh

We describe a two-step synthesis of pure multiwall MoS2 nanotubes with a high degree of homogeneity in size. The Mo6S4I6 nanowires grown directly from elements under temperature gradient conditions in hedgehog-like assemblies were used as precursor material. Transformation in argon-H2S/H2 mixture leads to the MoS2 nanotubes still grouped in hedgehog-like morphology. The described method enables...

Journal: :Nano letters 2015
Weiyi Wang Awadhesh Narayan Lei Tang Kapildeb Dolui Yanwen Liu Xiang Yuan Yibo Jin Yizheng Wu Ivan Rungger Stefano Sanvito Faxian Xiu

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contr...

2016
David Arcos Daniel Gabriel Dumitru Dumcenco Andras Kis

In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS2 has attracted great interest due to the existence of a direct bandgap in monolayer MoS2, which gives the possibility of achieving MoS2 fieldeffect transistors or optoelectronic devices. We analyzed by THz time-domain spectroscopy (THz-TDS) up to 2 THz and infrared (IR) spectroscopy, CVD-obtained MoS2 us...

Journal: :Physical chemistry chemical physics : PCCP 2015
Darwin Barayang Putungan Shi-Hsin Lin Ching-Ming Wei Jer-Lai Kuo

Utilizing ab initio random structure searching, we investigated Li adsorption on MoS2 and hydrogen molecules on Li-decorated MoS2. In contrast to graphene, Li can be adsorbed on both sides of MoS2, with even stronger binding than on the single side. We found that high coverages of Li can be attained without Li clustering, which is essential for hydrogen storage and Li ion batteries. Moreover, r...

Journal: :Nanoscale 2015
Zhaolong Yang Daqiang Gao Jing Zhang Qiang Xu Shoupeng Shi Kun Tao Desheng Xue

High Curie temperature ferromagnetism has been realized in atomically thin MoS2 and WS2 nanosheets. The ultrathin nanosheet samples were prepared via a novel, simple and efficient chemical vapor deposition method; different kinds of transition metal disulfides (MoS2 and WS2) could be obtained by sulphuring the corresponding cation sources (MoO3 and WCl6). Through related morphological and struc...

2015
Dongri Qiu Eun Kyu Kim

We fabricated multi-layered graphene/MoS2 heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS2 onto Au metal pads on a SiO2/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties of Au/MoS2 junction devices for systematic comparison. A previous work has demonstrated the existence o...

2017
Rui Zhou Jian-Gan Wang Hongzhen Liu Huanyan Liu Dandan Jin Xingrui Liu Chao Shen Keyu Xie Bingqing Wei

A low-cost bio-mass-derived carbon substrate has been employed to synthesize MoS2@carbon composites through a hydrothermal method. Carbon fibers derived from natural cotton provide a three-dimensional and open framework for the uniform growth of MoS2 nanosheets, thus hierarchically constructing coaxial architecture. The unique structure could synergistically benefit fast Li-ion and electron tra...

2014
Oliver Ochedowski Kolyo Marinov Nils Scheuschner Artur Poloczek Benedict Kleine Bussmann Janina Maultzsch Marika Schleberger

Thinning out MoS2 crystals to atomically thin layers results in the transition from an indirect to a direct bandgap material. This makes single layer MoS2 an exciting new material for electronic devices. In MoS2 devices it has been observed that the choice of materials, in particular for contact and gate, is crucial for their performance. This makes it very important to study the interaction be...

Journal: :Nano letters 2013
Han Liu Mengwei Si Sina Najmaei Adam T Neal Yuchen Du Pulickel M Ajayan Jun Lou Peide D Ye

Monolayer molybdenum disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this Letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect trans...

2017
Pengkun Xia Xuewei Feng Rui Jie Ng Shijie Wang Dongzhi Chi Cequn Li Zhubing He Xinke Liu Kah-Wee Ang

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mec...

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