نتایج جستجو برای: assisted deposition
تعداد نتایج: 221136 فیلتر نتایج به سال:
A chemistry-based approach to designing precursors for the deposition of inorganic films requires consideration of the physical properties of the precursor compound (e.g., volatility for transport in the reactor) and its probable decomposition pathways, both in the gas phase and on the surface during growth. We have been using Aerosol-Assisted Chemical Vapor Deposition of tungsten carbonitride ...
For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni ...
The paper presents the method of plasma-assisted deposition AlMgB14 films in a discharge system that consisted large volume gas plasma generator with thermionic and hollow cathode. An electrode BAM powder was placed plasma. High-frequency voltage 13.56 MHz applied to powder. In contrast traditional RF magnetron deposition, use made it possible significantly increase rate for reduce pressure wor...
Previously, in situ bombardment of massive ions (Ar, Kr, etc.) was considered to be necessary for the formation of c-BN films. Because of the accumulated stress, bombardment of massive ions has led to the formation of c-BN films with poor adhesion. Here we show that c-BN films can be grown without involving bombardment of massive ions. This is achieved by using plasma-assisted pulsed-laser depo...
Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically densealigned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with wate...
In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts a...
A laser-assisted plasma-coating technique at atmospheric pressure (LAPCAP) has been investigated. The electron temperature, electron density and gas temperature of the atmospheric-pressure plasma have been measured using optical emission spectroscopy (OES). LAPCAP utilizes laser ablation of 3 mol% yttria-stabilized zirconia into an atmospheric helium/nitrogen plasma to deposit thermal barrier c...
Matrix Assisted Pulsed Laser Evaporation (MAPLE) is a thin film deposition technique derived from Pulsed Laser Deposition (PLD) for deposition of delicate (polymers, complex biological molecules, etc.) materials in undamaged form. The main difference of MAPLE technique with respect to PLD is the target: it is a frozen solution or suspension of the (guest) molecules to be deposited in a volatile...
Controlled integration of features that enhance the analytical performance of a sensor chip is a challenging task in the development of paper sensors. A critical issue in the fabrication of low-cost biosensor chips is the activation of the device surface in a reliable and controllable manner compatible with large-scale production. Here, we report stable, well-adherent, and repeatable site-selec...
In-situ high-temperature x-ray diffraction (HTXRD) was used to study the phase formation and reaction kinetics of the Ba2YCu3O6+x (Y-213) phase using the ex-situ “BaF2 conversion process”. Three sets of films on single crystal SrTiO3 substrates were prepared using the e-beam coevaporation technique of BaF2, Y and Cu targets. HTXRD studies were conducted on precursor films with thicknesses of 0....
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