As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation of a silicon nanowire transistor. In these simulations we have included phonon scattering through a r...

A simple and easy-to-handle semi-analytical model able to describe heat transport in heterostructures of length varying from the nano microscale is presented. It consists redefining three intrinsic parameters: ballistic thermal conductance, effective conductivity, interface conductance by using two temperatures T+ T? distinguishing phonon populations according direction their velocities instead...

We prove the existence of ballistic transport for a Schrödinger operator with generic quasi-periodic potential in any dimension d > 1.

The anomalous spin diffusion of the integrable easy-axis Heisenberg chain originates in ballistic transport symmetry sectors with nonzero magnetization. Ballistic is replaced by normal dissipative all magnetization upon introducing integrability-breaking perturbations, including external driving. Such behavior implies that constant obtained for model relevant spread excitations but not conducti...

Nanoscale Schottky barrier MOSFETs (SBFETs) are explored by solving the two-dimensional Poisson equation self-consistently with a quantum transport equation. The results show that for SBFETs with positive, effective metal-semiconductor barrier heights, the on-current is limited by tunneling through a barrier at the source. If, however, a negative metal-semiconductor barrier height could be achi...

A variation of ballistic electron emission microscopy has been developed to image magnetic structure in thin-film multilayers with nanometer resolution. In studies of nominally uncoupled Co/Cu/Co trilayer films, magnetic domains and domain-wall motion are readily observable with this technique. In the Co/Cu/Co trilayer system magnetic domains are found to occur on an ;500-nm-length scale and le...

As transistors get smaller, fully quantum mechanical treatments are required to properly simulate them. Most quantum approaches treat the transport as ballistic, ignoring the scattering that is known to occur in such devices. Here, we review the method we have developed for performing fully quantum mechanical simulations of nanowire transistor devices which incorporates scattering through a rea...

Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors" (2008). One-dimensional ͑1D͒ and two-dimensional ͑2D͒ metal-oxide-semiconductor field-effect transistors are compared using an approach based on the top-of-the-barrier ballistic transport model. The results for model devices show that 1D and 2D transistors...