A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of luA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiod...

In this paper, a novel universal receiver baseband approach is introduced. The chain includes a postmixer noise shaping blocker pre-filter, a programmable-gain post mixer amplifier (PMA) with blocker suppression, a differential ramp-based novel linear-in-dB variable gain amplifier and a Sallen–Key output buffer. The 1.2-V chain is implemented in a 65-nm CMOS process, occupying a die area of 0.4...

A novel active feedback frequency compensation scheme is presented in this work. Based on the proposed technique, an amplifier with two main poles in its frequency bandwidth can be easily compensated by introducing a pole-zero pair in a local feedback. The proposed method is mathematically analyzed and then based on the derived formulations, a design procedure is established. The capability of ...

performance of the fiber optic networks with different physical topologies such as point-to-point, bus, ring and star, with respect to requirements as bit rates, topology structure, bit. error rate (ber) and optical component characteristics including optical amplifiers, filters, sources and detectors, are analyzed and simulated. for this purpose, maximum number of supportable nodes and throug...

Deep brain stimulation (DBS) is an effective and safe medical treatment that improves the lives of patients with a wide range neurological psychiatric diseases, has been consolidated as first-line tool in last two decades. Closed-loop deep (CLDBS) pushes this further by automatically adjusting parameters to response real time. The main contribution paper low-size/power-controlled, compact compl...

The reliable operation of SRAM in presence of process variation in sub-100nm devices is largely influenced by periphery circuits, like sense amplifiers, demanding more robust solutions. A new differential sense amplifier for use in standard 6-T SRAM based on gated-diode is proposed and designed. For comparison, three other latch-based sense amplifiers are also designed in 45nm technology. The b...

In this paper we present an ultra low-voltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages below 1V in a standard digital double poly CMOS process . The amplifier consists of a sinh shaped output current transconductance amplifier and a tanh shaped transconductance amplifier.