نتایج جستجو برای: carrier density

تعداد نتایج: 477152  

Journal: :Journal of Statistical Mechanics: Theory and Experiment 2019

2012
Leonardo Viti Miriam S Vitiello Daniele Ercolani Lucia Sorba Alessandro Tredicucci

We investigated the transport properties of lateral gate field effect transistors (FET) that have been realized by employing, as active elements, (111) B-oriented InAs nanowires grown by chemical beam epitaxy with different Se-doping concentrations. On the basis of electrical measurements, it was found that the carrier mobility increases from 103 to 104 cm2/(V × sec) by varying the ditertiarybu...

2017
D. Y. Wan Y. L. Zhao Y. Cai T. C. Asmara Z. Huang J. Q. Chen J. Hong S. M. Yin C. T. Nelson M. R. Motapothula B. X. Yan D. Xiang X. Chi H. Zheng W. Chen R. Xu   Ariando A. Rusydi A. M. Minor M. B. H. Breese M. Sherburne M. Asta Q-H Xu T Venkatesan

Semiconductor compounds are widely used for photocatalytic hydrogen production applications, where photogenerated electron-hole pairs are exploited to induce catalysis. Recently, powders of a metallic oxide (Sr1-xNbO3, 0.03<x<0.20) were reported to show competitive photocatalytic efficiencies under visible light, which was attributed to interband absorption. This discovery expanded the range of...

2011
Paul Gundel Martin C Schubert Friedemann D Heinz Robert Woehl Jan Benick Johannes A Giesecke Dominik Suwito Wilhelm Warta

Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a po...

2015
Jonas D. Buron Filippo Pizzocchero Peter U. Jepsen Dirch H. Petersen José M. Caridad Bjarke S. Jessen Timothy J. Booth Peter Bøggild

Carrier mobility and chemical doping level are essential figures of merit for graphene, and large-scale characterization of these properties and their uniformity is a prerequisite for commercialization of graphene for electronics and electrodes. However, existing mapping techniques cannot directly assess these vital parameters in a non-destructive way. By deconvoluting carrier mobility and dens...

2011
M. ODUNCUOĞLU

The effect of doping and temperature on the gain characteristics of GaInNAs/GaAs quantum well lasers emitting at 1.3 μm are investigated. The unusual band structure of dilute nitrides is analyzed using the band-anti-crossing model (BAC), effective mass and simple approximate expressions for carrier density and optical gain. A significant reduction in the transparency carrier density by p-type d...

Journal: :Science 2007
J R Williams L Dicarlo C M Marcus

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime...

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