نتایج جستجو برای: charge injection

تعداد نتایج: 296294  

1990
Joseph B. Bernstein

Widespread use of polymeric insulation has motivated interest in understanding the physics associated with the electrical aging process. Under DC bias, materials such as polyethylene (PE) and poly(methylmethacrylate) (PMMA) have been known to accumulate space charge. As charge builds up within the bulk, the electric field becomes modified with regions of higher and lower field. Detection of the...

2015
M. Fu G. Chen

Effects of cross-linking by-products (residues) of polyethylene on space charge accumulation and decay are investigated in the paper using the pulsed electro-acoustic technique. Space charge profiles have shown a great variation both in the charge initiation over the voltage ramping up process and later on long term stressing and decay (volts off) among the samples subjected to different condit...

Journal: :Journal of Materials Chemistry C 2022

The noble electrochemical doping agent enables stable of achiral π-CP in π-CP:aza[6]H blends, which allows better charge injection and balance for efficient circularly polarized optoelectronic devices.

2008
U. Blell J. Florenkowski M. Petryk P. Spiller

SIS18 will serve as booster synchrotron for the proposed International Accelerator Facility FAIR [1] at GSI. The aim is to provide high intensity proton and low charge state heavy ion beams of e.g. U 28+ -ions with a repetition rate of 2.7 – 4 cycles per second. The operation with low charge state heavy ion beams requires modifications of the injection system. At present, the maximum field stre...

2016
Chuan Liu Gunel Huseynova Yong Xu Dang Xuan Long Won-Tae Park Xuying Liu Takeo Minari Yong-Young Noh

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by t...

Journal: :IEEE Journal of the Electron Devices Society 2022

A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors dual gated reconfigurable transistors. The given calculates charge-carrier injection over barriers. This current separated into a field emission current, by charge carriers tunneling through barriers thermionic overcoming verification done comparing resu...

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