Solution-processable [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives with various end-capping groups, 2-(phenylethynyl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (Compound 1), 2-octyl-7-(5-(phenylethynyl)thiophen-2-yl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene 2), and triisopropyl((5-(7-octylbenzo[b]benzo[4,5]thieno[2,3-d]thiophen-2-yl)thiophen-2-yl)ethynyl)silane 3), have been synthesized c...

Details: Session: Date: Time: Room: 03.Narrow Gap and Compound Semiconductors 08/09 12:50 Exhibition Hall 1 Title: Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge Authors: Matteo Bosi3, Giovanni Attolini3, Claudio Ferrari3, Cesare Frigeri3, Marco Calicchio3, Francesca Rossi3, K醠m醤 Vad2, Csik Attila2, Zsolt Zolnai1 1Research Institute for Technical Physics and Materials Scie...

Detection of moisture contamination in hydride gases, such as ammonia used for epitaxial growth, has become a significant concern for manufacturers of III-V compound semiconductors. The presence of moisture in NH3 can negatively affect device properties, such as minority-carrier lifetimes and luminescent efficiency in light-emitting diodes. Tunable diode laser spectroscopy (TDLAS) has emerged a...

Tuning the band gap in ternary III-V semiconductors via modification of composition or strain material is a major approach for design optoelectronic materials. Experimental approaches screening large range possible target structures are hampered by tremendous effort to optimize synthesis every structure. We present an based on density functional theory efficiently capable providing as function ...

In this paper we propose a new model for impurity diffusion in compound semiconductors. The model incorporates both the kick-out and the dissociative mechanism, as well as charge effects; the resulting system includes as limit cases many models that have previously appeared in the literature. An initial–boundary value problem that models surface source in-diffusion conditions is then considered...

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The last few years have witnessed an explosion of interest in exploring the use of III-Vs to advance logic CMOS beyond the point of diminishing returns for silicon technology. There is now a tantalizing possibility that these compound semiconductors will enter the CMOS roadmap. If they do, the benefits could be huge – they could extend Moore’s Law by two or three more nodes, a huge contribution...

The development of a transmission electron microscope equipped with a field emission gun paved the way for electron holography to be put to practical use in various fields. In this paper, we review three advanced electron holography techniques: on-line real-time electron holography, three-dimensional (3D) tomographic holography and phase-shifting electron holography, which are becoming importan...

The atomic surface structure of compound semiconductors plays a large role in the growth of semiconductor films and the final microstructure of the film. During growth of InxGa1−xAs films, a mixed-termination surface consisting of a (4x3) reconstruction with common binary InAs or GaAs reconstructions, such as the α2(2x4), has been observed. We have used Density Functional Theory (DFT) to determ...

Enhanced electrooptic coefficient of GaInAsP three-step quantum wells (3SQW) for high power electrorefraction modulator applications is reported. Measured electrooptic coefficient of the 3SQW is nearly three times higher than the conventional rectangular quantum well (RQW) at λ=1.55 μm. Higher electrooptic effect, combined with a low optical absorption coefficient α<1 cm in the 3SQW increased t...