Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According literary data 3–5 single nowadays 4 6 inches. So far up 75 mm indium antimonide have been in Russia. Indium element base for widest field solid state electronics, i.e., optoelectronics. used fabrication range linear photodetectors photodetector arr...

Herein, effects related to reactions involving hydrogen during carrier injection at room temperature in boron‐doped Czochralski‐grown silicon wafers are investigated. It is shown that these conditions lead boron–oxygen defect regeneration. Under conditions, bulk material quality degradation induced by a dark annealing can be temporarily recovered the same way as light and elevated temperature‐i...

A study was performed on the growth interface of a large-diameter 1 at% neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystal grown using Czochralski method. Red parallel light and an orthogonal polarizing system were used to observe distribution central lateral cores at different interfaces. The solid–liquid Nd:YAG mainly determined via interaction between natural forced convection. ...