Development of techniques for characterization of extremely thin films is an important challenge in terahertz (THz) science and applications. Spectroscopic measurements of materials on the nanometer scale or of atomic layer thickness (2D materials) require a sufficient terahertz wave–matter interaction length, which is challenging to achieve in conventional transmission geometry. Waveguide-base...

The structures of αand β-Ag3VO4 were studied via singlecrystal X-ray diffraction (XRD). The transition from α-phase to β-phase was found to occur at 110 °C. Single-crystal XRD revealed that the integrity of the single crystals was maintained as Ag3VO4 reversibly transitioned between α-Ag3VO4 and β-Ag3VO4. The optical and electrical properties of polycrystalline α-Ag3VO4 were studied by diffuse ...

Pb(Zn1/3Nb2/3)O3 (PZN) is a well known relaxor ferroelectric with excellent dielectric properties for capacitor applications and electromechanical properties for sensor and actuator applications. The perovskite structure stabilization of PZN based ceramics and their respective thin films has limited their applications in these devices. The crystallization behavior and the development of the per...

A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. The TFT devices would offer applications for low-cost, rapid and highly compatible water-soluble detection and could replace conventional silicon field effect transistors (FETs) as bio-sensors. In...

The mechanical properties of interfaces and more precisely the adhesion are of great importance to understand the reliability of thin film devices. Organic thin film transistors (OTFT) on flexible substrate are a new class of electronic components. Since these devices are flexible and intended for different fields of application like sensors and displays, they will undergo a lot of mechanical a...

An optical surface roughness model is presented, which allows a reliable determination of the dielectric function of thin films with high surface roughnesses of more than 10 nm peak to valley distance by means of spectroscopic ellipsometry. Starting from histogram evaluation of atomic force microscopy (AFM) topography measurements a specific roughness layer (RL) model was developed for an organ...

Capacitors with ultra-thin (6.0–12.0 nm) CVD Ta2O5 film were fabricated on lightly doped Si substrates and their leakage current (Ig–Vg) and capacitance (C–V ) characteristics were studied. For the first time, samples with stack equivalent oxide thickness around 2.0 nm were compared with ultra-thin silicon dioxide and silicon oxynitride. The Ta2O5 samples showed remarkably lower leakage current...

Ferroe lectri c Pb(Zr,Ti)O, (PZT) thin films ha ve been fa bri cated by the alkoxide based so l-ge l method. PZT stoc k so lutions ha ve been spin coated on glass. sili con and metalli sed sil ico n substrate. The coating is repeated until 0.6 ~lIn thick ness of film has been deposited on various substrates. PZT thin films have been an ne led at vari ous temperatures and characte rized by X-ray...

Sb2Te3 thin films of different thickness (23 350 nm) were prepared by thermal evaporation technique. The thickness dependence of the ac conductivity and dielectric properties of the Sb2Te3 films have been investigated in the frequency range 10 Hz100 kHz and within the temperature range 293373K. Both the dielectric constant ε1 and dielectric loss factor ε2 were found to depend on frequency, temp...