The formation of arsenic and phosphorus junctions is an important process step in modern device fabrication. The accurate prediction of the vertical and lateral profile is crucial for optimization of the device behavior and reliability. Experimental data show that the damage from implantation of the dopant species has an important and controlling effect on the final profile during low-temperatu...

This Sentaurus simulation project provides a template setup for three-dimensional process simulation and device simulations of Omega FinFETs. The threedimensional process simulation is based on a particularly robust approach in which geometry-altering and dopant-related processing steps are executed sequentially in two separate groups. The Sentaurus Workbench template project also performs 3D q...

Dopant activation annealing of an elevated Ge-S/D structure formed on Si was investigated for application in advanced CMOSFET fabrication. Due to the low melting point of Ge, dopant activation was observed below 600 8C. However, the low temperature annealing process resulted in high reverse-bias p–n junction leakage. A thermal process budget of 900 8C, 60 s was found to be the minimum necessary...

In this paper, the impact of RDF on the static noise margin (SNM) and read current margin (SINM) of a prototype 22nm 6T SRAM was investigated using TCAD modeling. Individual device statistics of threshold voltages (Vt) and transport related parameters were first extracted for NFETs and PFETs. SNM and SINM characteristics of the corresponding SRAM cells were then analyzed. Two methods to emulate...

The effect of extrinsic background doping on the transient enhancement of dopant diffusion for an ion-implanted dopant is investigated to gain insight into the role of point defect charge states. The transient effect is found to be greatly increased for extrinsic background doping of the same type as the implanted ion, and reduced for background doping of the opposite type. Analysis of the rela...

It is hypothesized that a highly ordered, relatively defect-free dilute magnetic semiconductor system should act as a weak ferromagnet. Transition-metal-doped ZnO nanowires, being single crystalline, single domain, and single phase, are used here as a model system for probing the local dopant coordination environments using X-ray absorption spectroscopy and diffraction. Our X-ray spectroscopic ...

In this work, we present a new three-dimensional Monte Carlo (MC) method which naturally recovers the realspace carrier-impurity Coulomb interaction by mesh-based resolution of Poisson’s equation. This method necessitates no additional modifications to the conventional MC simulator, thus simplifying the implementation process. The new method has been validated through the reproduction of the do...

We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all substitutional-substitutional interactions can be neglected. On the other hand, interactions involving an interstitial defect are significant. Specially, interstitial Be is stabili...

This paper describes a Monte Carlo simulation technique designed to predict the sign and magnitude of the helical twisting power, bM, of a chiral material. The method calculates the chemical potential difference, Dm, between a chiral dopant and its enantiomer when they are placed in a twisted nematic solvent. In the low concentration limit, Dm is directly proportional to bM. In the simulations ...