Rare earth doping is the key strategy to increase the Curie temperature (T(C)) of the ferromagnetic semiconductor EuO. The interplay between doping and charge carrier density (n), and the limit of the T(C) increase, however, are yet to be understood. We report measurements of n and T(C) of Gd-doped EuO over a wide range of doping levels. The results show a direct correlation between n and T(C),...

Recent ARPES measurements on the electron-doped cuprate Nd2−xCexCuO4 can be interpreted in a mean field model of uniform doping of an antiferromagnet, with the Mott gap closing near optimal doping. Mode coupling calculations confirm the mean field results, while clarifying the relation between the Mott gap and shortrange magnetic order. The same calculations find that hole doped cuprates should...

We report clear experimental evidence for the charge manipulation of molecules encapsulated inside single-wall carbon nanotubes (SWCNTs) using electrochemical doping techniques. We encapsulated β-carotene (Car) inside SWCNTs and clarified electrochemical doping characteristics of their Raman spectra. C=C streching modes of encapsulated Car and a G band of SWCNTs showed clearly different doping ...

The effect of Fe doping ~,20%! on the Mn site in the ferromagnetic ~x50.37! and the antiferromagnetic ~x50.53! phases of La12xCaxMnO3 has been studied. The same ionic radii of Fe 31 and Mn cause no structure change in either series, yet conduction and ferromagnetism have been consistently suppressed by Fe doping. Colossal magnetoresistance has been shifted to lower temperatures, and in some cas...

We present an experimental investigation of the effect of kinetic energy on the ion doping efficiency of superfluid helium droplets using cesium cations from a thermionic emission source. The kinetic energy of Cs(+) is controlled by the bias voltage of a collection grid collinearly arranged with the droplet beam. Efficient doping from ions with kinetic energies from 20 eV up to 480 V has been o...

Nitride-based device structures for electronic and optoelectronic applications usually incorporate layers of AlxGa1-xN, and nand p-type doping of these alloys is typically required. Experimental results indicate that doping efficiencies in AlxGa1-xN are lower than in GaN. We address the cause of these doping difficulties, based on results from first-principles densityfunctional-pseudopotential ...

Research in doping has focused on potential intervention strategies, increasingly targeting predicting factors. Yet, findings are inconsistent, mostly athlete-centred and explain only limited variances in behaviour. This critical review aims to (a) summarize studies that identified predictors of doping intentions, susceptibility, and behaviour in elite athletes and to (b) analyse in how far pre...

Article history: Received 29 May 2015 Received in revised form 21 June 2015 Accepted 23 June 2015 Available online xxxx Superjunction (SJ) MOSFETs with low on-resistance and high sustain voltage are widely used as main switching power devices. For the p/n-pillars of SJ-power devices, precise doping at low-doping region below 10 cm concentrations is required, and thus high-sensitivity 2D-carrier...

Doping is one of the most serious problems for athletes, and it is important that pharmacists have more interaction with athletes to ensure safer drug usage. Education is one of the most important roles of sports pharmacists, who are specialists regarding drug usage for athletes. We investigated pharmacy students' interests and comprehension regarding drug usage, doping and supplement intake by...