Abstract Controlling the fast electrophoresis of nano-objects in solid-state nanopores is a critical issue for achieving electrical analysis single-particles by ionic current. In particular, it crucial to slow-down translocation dynamics nanoparticles. We herein report that focused electric field and associated water flow surround-gate nanopore can be used trap manipulate nanoscale object. fine...

We present a study on the metal–graphene contact properties. Utilizing a dual-gate field-effect transistor device, an energetic separation between the Fermi level and the Dirac point in the contact areas can be adjusted deliberately by applying an appropriate front-gate voltage that acts only on the channel. This front-gate voltage is compensated by an opposite large-area backgate voltage, ther...

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very imp...

A novel method for the reduction of subthreshold slope below the room-temperature Boltzmann limit of 60 mV/dec for a field-effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This i...

In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform n...

A closed-form inversion charge-based long-channel drain current model is developed for a symmetrically driven, lightly doped Symmetric Double-Gate MOSFET (SDGFET). It is based on the drift-diffusion transport mechanism and considers velocity saturation using the Caughey-Thomas model with exponent n=2, vertical field mobility degradation and body doping. It is valid in subthreshold as well as ab...