A thorough material characterization of 1,7-diazaperylene via multiple investigation techniques (cyclic voltammetry, photoluminescence, photoluminescence excitation, impedance spectroscopy) was performed to understand its applicability in organic electronic devices. The recorded data this perylene derivative placed conjunction with the respective parent molecule, and behavior novel compound dev...

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We fabricated ultra-flexible pentacene field-effect transistors (FETs) with a mobility of 0.5 cm/Vs and an on/off ratio of 10, which are functional at the bending radius less than 1 mm. The transistors are manufactured on a 13-μm-thick polyimide film and covered by a 13-μm-thick poly-chloro-para-xylylene encapsulation layer so that transistors can be embedded at a neutral position. This sandwic...

The classical MOSFET is reaching its scaling limits and “endof-roadmap” alternative devices are being investigated. Amongst the different types of SOI devices proposed, one clearly stands out: the multigate fieldeffect transistor (multigate FET). This device has a general “wire-like” shape. Multigate FETs are commonly referred to as “multi(ple)-gate transistors”, “FinFETs”, “tri(ple)-gate trans...

We fabricated field-effect transistors based on individual singleand multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-w...

Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohm...

Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 na...

We study the channel width scaling of back-gated MoS2 metal–oxide–semiconductor field-effect transistors from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT ) shi...

Power MOSFETs (Metal Oxide Semiconductor, Field Effect Transistors) differ from bipolar transistors in operating principles, specifications, and performance. The performance characteristics of MOSFETs are generally superior to those of bipolar transistors: significantly faster switching time, simpler drive circuitry, the absence of or reduction of the secondbreakdown failure mechanism, the abil...

This Thesis details the design, fabrication and characterization of organic semiconductor field effect transistors with silicon oxide-nitride-oxide-semiconductor (SONOS) gates for use in spiking analog neural circuits. The results are divided into two main sections. First, the SONOS structures, parallel plate capacitors and field effect transistors, were designed, fabricated and characterized. ...