نتایج جستجو برای: electroforming

تعداد نتایج: 244  

Journal: :IEEE Electron Device Letters 2021

A manufacturing study of a 0.372 THz 8-fold (8F) helically corrugated interaction region (HCIR) and measurement its wave dispersion characteristics are reported. This demonstrates the structure’s suitability as electron beam / electromagnetic in high power frequency tunable Gyroresonant source. The 8F HCIR has an eigenmode, which is ideal for broadband tuning, created by coupling TE <sub xmlns:...

Journal: :Applied Physics Letters 2021

An oxidizable metal diffusion barrier inserted between the active electrode and switching layer decreases electroforming voltage enhances stability synaptic performances in TaOx-based conducting bridge memristor devices. The TiW avoids an excessive ion into layer, while TiWOx interfacial is formed layer. It modulates oxygen vacancy distribution at top interface contributes to formation rupture ...

2014
Shinbuhm Lee Abhijeet Sangle Ping Lu Aiping Chen Wenrui Zhang Jae Sung Lee Haiyan Wang Quanxi Jia Judith L MacManus-Driscoll

A novel device structure is developed, which uses easy-to-grow nano scaffold films to localize oxygen vacancies at vertical heterointerfaces. The strategy is to design vertical interfaces using two structurally incompatible oxides, which are likely to generate a high-concentration oxygen vacancy. Non-linear electroresistance at room temperature is demonstrated using these nano scaffold devices....

Journal: :Nanoscale 2013
Hao Jiang Qiangfei Xia

Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltages of the same polarity but with different amplitudes. The forming step dictated the subsequent switching behaviour. A qualitative model based on the creation and migration of oxygen vacancies was proposed to explain the experimental results.

Journal: :Electronics 2021

In the attempt to understand behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal were fabricated; atomic layer deposition technique was used grow high-k layer. After performing an electroforming process room temperature, device cooled in a cryostat carry out 100 current–voltage cycles several temperatures ranging from “liquid nitrogen temp...

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