In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300 ◦C – 600 ◦C) and ambient (N2 or O2). High effective mobility of 312 cm2/Vs and low interface-state density of 6 × 1010 cm−2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) o...

Ever since the invention of various leakage power reduction techniques, leakage and dynamic power reduction techniques are categorized into two separate sets. Most of them cannot be applied together during runtime. The gap between them is due to the large energy breakeven time (EBT) and wakeup time (WUT) of conventional leakage reduction techniques. This paper proposes a new leakage reduction t...

A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (nVDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel length Lg. A tremendous improvement in the drive-on current is noted. The electron concentration profil...

An analytical model for lateral MOSFET that includes the effects of temperature variation in 4Hand 6H-SiC poly-type is presented in this paper. SiC shows a tremendous potential for high temperature electronics applications [1-4]. The model includes the effects of temperature variation on the threshold voltage, the carrier mobility, the body leakage current, and the drain and source contact regi...

Scaling the Si MOSFET is revisited. Requirements on subthreshold leakage control force conventional scaling to use high doping as the device dimension penetrates into the deep-submicrometer regime, leading to undesirable large junction capacitance and degraded mobility. By studying the scaling of fully depleted SO1 devices, we note the important concept of controlling horizontal leakage through...

A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps ~energy level and concentration! and the Huang–Rhys factor. Therefore, dependences of the trapping and detrapp...

IMRT plans are usually verified by phantom measurements: dose distributions are measured using film and the absolute dose using an ionization chamber. The measured and calculated doses are compared and planned MUs are modified if necessary. To achieve a conformal dose distribution, IMRT fields are composed of small subfields, or "beamlets." The size of beamlets is on the order of 1 x 1 cm2. The...

The economic and environmental losses due to serious leakage in the urban water supply network have increased the effort to control the water leakage. However, current methods for leakage estimation are inaccurate leading to the development of ineffective leakage controls. Therefore, this study proposes a method based on the blind source separation theory (BSS) to calculate the leakage of water...

one of the important factors influencing outdoor insulators performance is pollution phenomenon. the pollution, especially during humidity condition, reduces superficial resistance of insulator and lead to a flow of leakage currents (lc) on the insulator surface, which may result in total flashover. the lc characteristics are affected by parameters such as nature and severity of pollution. loca...