We calculate the tunneling current in a quantum Hall bilayer system in the strong magnetic field limit. We model the bilayer electron system as two Wigner crystals coupled through interlayer Coulomb interactions, treated in the continuum limit. We generalized the Johansson and Kinaret (JK) model and were able to study the effect of the low energy out-of-phase magnetophonon modes produced as a r...

Electron tunneling is investigated for the alkanethiol self-assembled monolayers (SAMs) formed using three different device structures spanning from the nanometer to the micrometer scale. The measured current–voltage characteristics for the alkanethiol SAMs can be explained by the classical metal–insulator–metal tunneling model and the tunneling current exhibits overall exponential trend on the...

Engineering the electromagnetic environment in a nanostructure to study single electron tunneling

We study the Coulomb blockade of tunneling through a double quantum dot. The temperature dependence of the linear conductance is strongly affected by the interdot tunneling. As the tunneling grows, a crossover from temperature-independent peak conductance to a power-law suppression of conductance at low temperatures is predicted. This suppression is a manifestation of the Anderson orthogonality...

The influence of a magnetic field on the tunneling of an electron out of a confining plane is studied by a path integral method. We map this 3-d problem on to a 1-d one, and find that the tunneling is strongly affected by the field. Without a perpendicular field the tunneling at zero temperature can be completely suppressed by a large parallel field, but in the small parallel field and low temp...

The Tunneling-Dielectric TFT (TDTFT), that has thin dielectric films at both ends of the channel fabrication area, was fabricated with 1.7 nm SiNX film by LPCVD method. The conduction mechanism of the drain currents was examined in the temperatures from 293 to 623 K experimentally and theoretically. The Id-Vg characteristics were reproduced by the direct tunneling (DT) via SiNX film with an ass...

We measure electron tunneling via discrete energy levels in ferromagnetic cobalt particles that are less than 4 nm in diameter, using nonmagnetic electrodes. Because of magnetic anisotropy, the energy of each tunneling resonance shifts as an applied magnetic field rotates the particle’s magnetic moment. We see both spin-increasing and decreasing tunneling transitions, but do not observe the spi...

The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling...

We investigated the transmission probability of a single electron transmission through a quantum ring device based on the single-band effective mass approximation method and transfer matrix theory. The time-dependent Schrödinger equation is applied on a Gaussian wave packet passing through the quantum ring system. The electron tunneling resonance peaks split when the electron transmits through ...

A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier to a simple analytical model [1], [2], a correction function is introduced to achieve universal applicability to all different combinations of bias polarities (inversion and accumulation), gate materials (N, P, Si, SiGe) and tunneling processes. Each coefficient of the...