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0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.10.017 ⇑ Corresponding author at: Center for Advanced Lif University of Maryland, College Park, MD 20742, Uni E-mail address: [email protected] (M. Pecht). Development of prognostic approaches for insulated gate bipolar transistors (IGBTs) is of interest in order to improve availability, reduce downtime, and prevent...

Single photon sources can greatly benefit from specially designed structures that modify the properties of the photon emitter. Dielectric cavities are often discussed, but they require a compromise between the spectral width and Purcell factor. In this Letter, we introduce plasmonic cavities as promising alternatives. We first study how the emitter couples with the modes of such structures. We ...

One possibility to make a fast and radiation resistant shower maximum (SM) detector is to use a secondary emitter as an active element. We present below test beam results, obtained with different types of photo detectors based on micro channel plates (MCP) as secondary emitter. The SM time resolution we obtained for this new type of detector is at the level of 20-30 ps. We estimate that a signi...

Planar photonic nanostructures have recently attracted a great deal of attention for quantum optics applications. In this article, we carry out full 3D numerical simulations to fully account for all radiation channels and thereby quantify the coupling efficiency of a quantum emitter embedded in a photonic-crystal waveguide. We utilize mixed boundary conditions by combining active Dirichlet boun...

4.1 Discovering the ELDRE In 1991 Enlow and coworkers made a comparative study between traditional crystalline emitter transistors (BJTs) and polysilicon emitter transistors (PETs) [1]. The work was intended to study the difference in radiation response of these technologies; indeed at this time large amounts of data were available for crystalline transistors, while very little attention had be...

0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.011 * Corresponding author. Address: Department of El Chiao Tung University, 1001 Ta-Hsueh Road, Hsinc 35712121x52974. E-mail address: [email protected] (Y. Li). In this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high-pressure treatment i...

In this paper, we report a new collector-up npn heterojunction bipolar transistor (C-up HBT) which employs a p-type doping buried layer inserted between extrinsic emitter and subemitter for current confinement. A theoretical study is performed to verify the functionality of the p-type doping buried layer using a two-dimensional device simulator. The structural parameters of the device and bias ...

The low level doping of a selective emitter by etch back is an easy and low cost process to obtain a better blue response from a solar cell. This work suggests that the contact resistance of the selective emitter can be controlled by wet etching with the commercial acid barrier paste that is commonly applied in screen printing. Wet etching conditions such as acid barrier curing time, etchant co...