The support of epitaxial films frequently determines their crystallographic orientation, which is of crucial importance for their properties. We report a novel way to alter the film orientation without changing the substrate. We show for the growth of CoO on the Ir(100) surface that, while the oxide grows in (111) orientation on the bare substrate, the orientation switches to (100) by introduci...

We have developed a method for fabricating epitaxial CoSi2 nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxial CoSi2 layers grown on Si~100! and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi2 /Si heterostructure and leads to the separation of...

Amorphization and solid-phase epitaxial growth were studied in C-cluster ion-implanted Si. C7H7 ions were implanted at a C-equivalent energy of 10 keV to C doses of 0.1 9 10 cm 2 to 8.0 9 10 cm 2 into (001) Si wafers. Transmission electron microscopy revealed a C amorphizing dose of 5.0 9 10 cm . Annealing of amorphized specimens to effect solid-phase epitaxial growth resulted in defect-free gr...

We report a quantitative measurement of the pressure effect on melting point elevation of encapsulated nanoparticles without epitaxial interfaces. By means of in situ x-ray diffraction, a substantial melting point elevation of about 15 K in encapsulated Al nanoparticles in Al2O3 shells without epitaxial interfaces was observed. Meanwhile, a pressure buildup of about 0.25 GPa on the Al nanoparti...

Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a warped graphene layer with hexagon-pentagon-heptagon (H(5,6,7)) defects that break the honeycomb symmetry, thereby inducing a gap and states below E(F near the K point. Although the next graphene layer assumes the perfect honeycomb lattice,...

Low-temperature aqueous solution deposition has been used for the first time to produce epitaxial ZnO layers on the semipolar (10 1 1) surface of bulk GaN substrates and LEDs. Although the ZnO films have single in-plane and out-of-plane orientations, which are nominally the same as those of the (10 1 1) GaN substrate, the ZnO lattice is observed to be slightly tilted with respect to that of the...

Photoelectrochemical cells (PECs), composed of different epitaxial n-Si photoanodes coated with evaporated metal film of Ni, Pt, Ni/Pt and immersed in solution with redox couple Br2 /Br or Fe(NC)g~7Fe(CN)£~ were investigated. The open circuit photovoltage and short circuit current density of these PECs under optimum conditions by illuminating with a bromine-tungsten lamp (65 mW/cm), are 0.494 V...

Commercially pure titanium for bone-anchored dental implants, submitted to a sand-blasting and acid-etching (SLA) surface treatment, has been mechanically tested and analyzed by SEM and TEM observations. A face-centered cubic titanium hydride layer grows on the polycrystalline titanium substrate with various epitaxial relationships, whose grains show also epitaxial relationships with each other...

Graphene is the promising material for the gas sensing application. High sensitivity to the nitrogen dioxide and ozone allows application of the simple graphene based devices for the environmental monitoring. The aims of the work were the fabrication of reliable graphene devices and the comparison of epitaxial and CVD-based graphene sensors for their sensing abilities. In order to increase sens...

We report results of the first computer simulation studies of a physically adsorbed gas on a quasicrystalline surface Xe on decagonal Al-Ni-Co. The grand canonical Monte Carlo method is employed, using a semiempirical gas-surface interaction, based on conventional combining rules, and the usual Lennard-Jones Xe-Xe interaction. The resulting adsorption isotherms and calculated structures are con...