AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density low-field mobility obtained by measuring the capacitance–voltage characteristics current–voltage characteristics. After proton irradiation, HEMT 30 distance increases that dec...

background: we have validated the monitor unit calculations from a commercially available treatment planning system (tps) for three intensity modulated radiotherapy (imrt) planning techniques for tangential breast irradiation by using ionization chamber measurements. materials and methods: treatment plans were generated for forty-two breast patients by a forward planned field in field technique...

Related Articles Field-emission-assisted approach to dry micro-electro-discharge machining of carbon-nanotube forests J. Appl. Phys. 110, 103305 (2011) The hysteresis phenomenon of the field emission from the graphene film Appl. Phys. Lett. 99, 173104 (2011) Temperature dependence of the field emission from the few-layer graphene film Appl. Phys. Lett. 99, 163103 (2011) Atomic layer coating of ...