A pressure sensor based on two dimensional photonic crystal structure is presented. The considered for sensing a lattice of air holes surrounded by semiconductor material. waveguide with central microcavity formed filling principle depends upon the shifting wavelength peak towards higher region when raised. proposed can work in range 0–5 GPa. Using this structure, semiconductors, Si and GaAs, h...

Repetitive pulsed-power generators with nanosecond rise times and multi-kilovolt outputs commonly employ silicon MOSFET switches. Gallium arsenide FET switches hold the promise of faster operation, higher voltage hold-off, and greater current densities. The realization of this promise requires an understanding of the physical and practical limits of Siand GaAs-based devices. In this paper, the ...

Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(1 0 0) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on Ga...

This article presents the response of RF microelectromechanical systems (RF MEMS), barium strontium titanate (BST), and gallium arsenide (GaAs)-based tunable filters and reconfigurable matching networks to a wideband code-division-multiple-access signal centered at 1.95 GHz. The RF MEMS tunable filter and impedance tuner result in very low intermodulation distortion and spectral regrowth compar...

We report the GaAsSb bulk layers and GaAsSb/GaAs quantum wells (QWs) grown on (1 1 1)B GaAs substrates by gas source molecular beam epitaxy. We found that Sb composition in the GaAsSb epilayers is very sensitive to the substrate temperature. The composition drops from 0.35 to 0.16 as the substrate temperature increases from 450 to 550 1C. The [1 1 1]B-oriented GaAsSb epilayers show phase separa...

We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer sh...

High-performance GaAs metal-insulator-semiconductor field-effect-transistors MISFETs fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density 10−5 A/cm2 at a gate bias...

GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on gold nanoparticle-activated Si (100) and Si (111) substrates via molecular beam epitaxy. Room temperature-photoluminescence (RT-PL) from the samples showed bulk-like GaAs and Al0.1Ga0.9As bandgap emission peaks at 1.43 and 1.56 eV, respectively. Higher PL emission intensity of the sample on Si (11...

We report on the growth of an InAs0.32Sb0.68 layer (001) GaAs substrates. The lattice mismatch strain between and substrate was accommodated using a thin 50–100 nm Ga0.35In0.65Sb buffer with interfacial misfit (IMF) dislocations. epitaxial structures were characterized transmission electron microscopy x-ray diffraction analysis. threading dislocation density in reduced successfully to ∼1 × 108 ...