We investigate the performances of 18 nm gate length AlInN/GaN, InP/InGaAs heterostructure and a Silicon double gate MOSFET, using 2D Sentaurus TCAD simulation. The heterostructure device uses lattice-matched wideband Al0.83In0.17N /InP and narrowband GaN / In0.53Ga0.47As layers, along with high-k Al2O3 as the gate dielectric, while silicon based device uses SiO2 gate dielectric. The device has...

Development of High-k Gates for Advances CMOS Devices High dielectric constant (high-k) materials, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), alumina (Al2O3), and their silicates, have drawn a great deal of attention in recent years for potential use as gate dielectrics in advanced CMOS processes [1]. With high dielectric constants, gate dieletrics can be made thicker than SiO2 while...

Transmission line pulse (TLP) measurements are used to demonstrate that oxynitride breakdown projections from DC measurements using conventional area and voltage-scaling techniques can be extended to the nanosecond timescale. ESD protection systems can thus be designed to prevent dielectric breakdown. Important concepts in gate dielectric breakdown such as the anode–hole injection model and are...

We describe a theoretical approach to transport and a potentially valuable scheme for screening gate dielectric materials. Realistic structural models of the Si-dielectric interface are employed for Si-SiO2-Si model metal-oxide–semiconductor ~MOS! structures. The leakage current for a 1.02-nm MOS structure is calculated from first principles using Landauer’s ballistic transport approach and ab ...

The magnitude of fractional current variation in ultra-small (30 nm channel length) MOSFETs due to single charge trapping-detrapping events at any position within the gate dielectric is studied using numerical simulation. These random telegraph signals in the drain current indicate the amplitude of low frequency MOSFET noise. Simulations are performed for realistic devices with poly-silicon gat...

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...

In the aggressive scaling of the gate dielectric thickness for continuous shrinkage of MOSFETs, a increase in the gate resistance emerges as one of major concerns from the viewpoint of eliminations in both the voltage drop through the gate under higher gate leakage current [1] and the gate depletion effect [2]. Especially, in case of poly-Si gate, with decreasing gate size, the gate depletion e...