The main objective of our paper is to propose an approach studying the mechatronic system’s reliability through their high electron mobility transistors (HEMT). operating temperature one parameters that influences characteristics transistor, especially represents advantage over other transistor’s families. Several factors can influence this temperature. Thanks thermal modeling, it possible dete...

In this study, we investigated the resonance mechanism of 6.78 MHz resonant wireless power transfer (WPT) systems. The depletion mode a gallium nitride high-electron-mobility transistor (GaN HEMT) was used to switch states in class-E amplifier circuit high frequency. D-mode GaN HEMT without body diode prevented current leakage from capacitor when drain-source voltage became negative. zero-volta...

In this paper, a doubly balanced V-band star mixer has been designed following the design method developed for I-Q modulators applications. The mixer has been designed using a commercial GaAs pseudomorphic HEMT process library. The mixer exhibits RF bandwidth over 45-65 GHz with local oscillator isolation better than 30 dB, and achieved a typical conversion loss of 9 dB. The IF modulation bandw...

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessedgate devices with SiO2 dielectrics are observed to exhibit simultaneous trappi...

A novel structure that encodes and decodes very high speed unipolar Code Division Multiple Access (CDMA) signals is proposed. This scheme is based on the analogy between the distributed amplifier and the transversal filter. By adjusting the gain of each tap and the delay between taps, the proposed device acts as a high-speed encoder (transmitter) or correlator (receiver). The theoretical analys...

In the modern VLSI especially for high speed devices, where the conventional MOSFET technology is reaching its limitations due to various short channel effects and velocity saturation effects etc, hetero-junction FETs have shown great promise for high speed devices. Novel HEMT device using heterojunctions made of and on a substrate is designed and modeled using TCAD software. Highly doped deep ...

Several plasma and wet-chemical surface treatments have been tested to determine their effectiveness in improving SiN passivation of the AlGaN surface in HEMT devices. Mitigation of RF dispersion was evidenced by dramatic improvements in pulsed IV data after various plasma surface treatments and SiN passivation were applied to gate-level processed HEMTs. To examine surface chemistry as a result...