In this paper, transistor lasers (TLs) are used as an optical modulator for generation of ASK(Amplitude Shift Keying) and FSK (Frequency Shift Keying) optical signals. Our analysis is based on continuity equation, rate equations, and the theory of discontinuity of quasi-fermi level at the abrupt junction. Our simulation results indicate that, the specification of ASK and FSK optical signals, ar...

Monolithic microwave integrated circuits hold a dominant position in telecom applications, especially mobile devices with capabilities for wireless connectivity, due to high and repeatable performance, compact form factor, low cost. With flexible electronic technologies forming the foundation rapidly growing wearable implantable device segment, need electronics levels of performance that match ...

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostruc...

This application report discusses how a super matched bipolar transistor pair sets new standards for drift and noise.

The spontaneous emission recombination lifetime of carriers in the active region transistor lasers (TLs) is significantly reduced due to accelerated carrier transport base under collector bias. Thus, it has potential for use as a high-speed optical fiber communication light source. unique three-electrode structure TL notably enriches modulation methods As an important parameter measure data tra...

A voltage-controlled negative-differential-resistance device using a merged integrated circuit of two n-channel enhancement-mode MOSFETs and a vertical NPN bipolar transistor, called vertical Lambda-bipolar-transistor (VLBT), is presented for memory application. The new VLBT structure has been developed and its characteristics are derived by a simple circuit model and device physics. A novel si...

High indium content In0.86Al0.14As/In0.86Ga0.14As double heterojunction bipolar transistors (DHBTs) were grown on InP substrates using thin 6.0 Å metamorphic compositionally graded buffer layers. Good DC and RF characteristics have been demonstrated, with high gain (~30), breakdown voltage greater than 2.5 V, turn-on voltage reduction by a factor of two compared to existing InP bipolar technolo...

We give a summary of the state-of-the-art of heterostructure RF-device simulators for industrial application based on III-V compound semiconductors and compare critical modeling issues. Results from two-dimensional hydrodynamic simulations of High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) with MINIMOS-NT are presented. Simulation examples are chosen to ...

Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 Å lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors HBTs . Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectificatio...

The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface properties and minority carrier lifetime are assessed by electrical and structural characterization measurements, and shown to vary by less than ±3% across the wafer. The dc curr...