نتایج جستجو برای: heterojunction field

تعداد نتایج: 793018  

2009
Woo-Jun Yoon Kyung-Young Jung Jiwen Liu Thirumalai Duraisamy Fernando L. Teixeira Suvankar Sengupta Paul R. Berger

Improved optical absorption and photocurrent for polythiophene–fullerene bulk heterojunction photovoltaic devices is demonstrated using a unique self-assembled monolayer of Ag nanoparticles formed from a colloidal solution. With the presence of suitable nanoparticle organic capping groups that inhibit its propensity to agglomerate, the particle-to-particle spacing can be tailored. Transmission ...

Journal: :Physical chemistry chemical physics : PCCP 2011
Marie-France Falzon Arjan P Zoombelt Martijn M Wienk René A J Janssen

Developing new acceptor materials as alternatives to fullerene acceptors remains a challenge in the field of organic photovoltaics. We report on the synthesis and optoelectronic properties of three acceptor polymers bearing diketopyrrolopyrrole units in the main chain (PA, PB and PC). Their performance as the acceptor material in bulk heterojunction solar cells using P3HT as the donor material ...

Journal: :Journal of the American Chemical Society 2015
Andrius Devižis Jelissa De Jonghe-Risse Roland Hany Frank Nüesch Sandra Jenatsch Vidmantas Gulbinas Jacques-E Moser

Ultrafast optical probing of the electric field by means of Stark effect in planar heterojunction cyanine dye/fullerene organic solar cells enables one to directly monitor the dynamics of free electron formation during the dissociation of interfacial charge transfer (CT) states. Motions of electrons and holes is scrutinized separately by selectively probing the Stark shift dynamics at selected ...

Journal: :Nano letters 2012
Kuniharu Takei Morten Madsen Hui Fang Rehan Kapadia Steven Chuang Ha Sul Kim Chin-Hung Liu E Plis Junghyo Nah Sanjay Krishna Yu-Lun Chueh Jing Guo Ali Javey

As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, t...

2004
C. N. Dharmasiri A. A. Rezazadeh

Large parasitic series resistances of heterojunction bipolar transistor (HBT) are shown to cause a sharp kink in the base current (IB) of the Gummel plot at elevated temperatures under high collector currents (IC) and low base-collector (b-c) applied bias (VBC). This effect was analyzed and attributed to the temperature dependence of low-field and high field mobilities of undepleted and deplete...

2017
Qing Wu Yu Liu Hailong Wang Yuan Li Wei Huang Jianhua Zhao Yonghai Chen

In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excit...

1997
M. Hayne J. J. Harris C. T. Foxon

We present experimental evidence for the levitation of extended states of a two-dimensional electron system in a magnetic field, and establish the presence of alternating regions of localized and extended states in the density of states to Landau-level filling factors ~n! as high as 80. Monitoring the Hall voltage of a modulationdoped GaAs/AlxGa12xAs heterojunction at fixed magnetic field durin...

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