نتایج جستجو برای: high electron mobility transistor
تعداد نتایج: 2357262 فیلتر نتایج به سال:
In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in class-E amplifier. Instead applying zero voltage switching control, requires frequency sampling at (>600 V), developed an innovative control method called minimum power input control. The output can be presented simple empirical e...
The field-effect mobility of hole polarons in α-sexithiophene, measured in thin film transistors, was shown to be well fitted by Holstein’s small polaron theory. Unfortunately, Holstein’s formulation is based on an integral that does not converge. We show that the data are well fitted by a theory of polaron transport that was successful in accounting for mobility in molecular crystals
The monolithic integration of enhancementand depletion-mode (Eand D-mode) high electron mobility transistors (HEMTs) lattice-matched to InP is of interest in the area of circuits for low power, high speed communications. When compared to circuits implemented in depletion-mode @-mode) only technology, circuits implemented in ED-mode technology enjoy a number of advantages. D-mode only circuits r...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید