The Na 2 SO 4 samples were obtained by slow evaporation method. mechanisms of the formation electron and hole trapping centers are investigated spectroscopic methods. Intrinsic recombination emission 2.9–3.1 eV impurity 1.85 excited at 4.0–4.5 eV. 3− −SO − Mn + revealed. local levels corresponding between center decay intrinsic was recorded temperatures 130–150 K 280–350 K.

III-nitride light-emitting diodes (LEDs) exhibit an injection-dependent emission blueshift and linewidth broadening that is severely detrimental to their color purity. By using first-principles multi-scale modeling accurately captures the competition between polarization-charge screening, phase-space filling, many-body plasma renormalization, we explain current-dependent spectral characteristic...

In this paper we report positron lifetime results obtained under high-power steady-state and transient optical excitation. We present a model to analyse the results. The method has been applied to vacancy clusters in natural diamond, for which we self-consistently analyse optoelectronic constants such as optical absorption cross section and hole recombination cross section. The temperature depe...

A method for computer simulation of time-resolved x-ray diffraction (TRXD) in asymmetric Laue (transmission) geometry with an arbitrary propagating strain perpendicular to the crystal surface is presented. We present two case studies for possible strain generation by short-pulse laser irradiation: (i) a thermoelastic-like analytical model; (ii) a numerical model including the effects of electro...

Time-correlated single photon counting methods are used with confocal microscopy and maximum likelihood estimation analysis to obtain fluorescence lifetime trajectories for single quantum dots with KHz update rates. This technique reveals that control of the solution environment can influence both radiative (k(rad)) and nonradiative (k(nonrad)) pathways for electron-hole recombination emission ...

Two competing recombination mechanisms of stimulated emission in the vicinity of 145 K have been directly observed in the temperature dependence of the optical emission spectra for high-quality, unintentionally doped gallium nitride. Our analysis of the spectra indicates that exciton-exciton scattering is responsible for stimulated emission below 145 K, while at higher temperatures an electron-...

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