The stability of the commonly used red cell radio labels chromium-51, indium-(111 or 113m), and technetium-99m, within intact red cells and stroma and their distribution within the cell were compared in undamaged and heat damaged red cells in relation to the clinical use of heat damaged cells in the assessment of splenic function. Chromium-51 labelled haemoglobin both in undamaged and heat dama...

The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface morphology of these MOVPE-grown AlInN thin films were examined. The surface morphologies of the samples we...

The strain effect of InGaN/GaN multi-quantum wells with different indium contents has been studied in the present paper. The high-resolution X-ray diffraction (HRXRD) curves of the samples have been measured and analyzed by a theoretical model. Based on the model, it is found that sample with higher indium content exhibits a stronger internal strain. To further investigate the calculated result...

A method for the synthesis of high quality indium-doped zinc oxide (In-doped ZnO) nanocrystals was developed using a one-step ester elimination reaction based on alcoholysis of metal carboxylate salts. The resulting nearly monodisperse nanocrystals are well-crystallized with typically crystal structure identical to that of wurtzite type of ZnO. Structural, optical, and elemental analyses on the...

The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that th...

Interband transitions in GaInNAsSb/ GaAs single quantum wells ͑SQWs͒ with nominally identical nitrogen and antimony concentrations ͑2.5% N and 7% Sb͒ and varying indium concentrations ͑from 8% to 32%͒ have been investigated by contactless electroreflectance ͑CER͒. CER features related to optical transitions between the ground and excited states have been clearly observed. Energies of the QW transitions...

Cadmium ranging from 1 - 8 ng could be coprecipitated quantitatively with lanthanum phosphate at pH 5 - 6 from up to 200 mL of river water samples spiked with 5 microg of indium as an internal standard. Cadmium and indium coprecipitated were measured by using electrothermal atomic absorption spectrometry. The cadmium content in the original sample solution could be determined by internal standa...

The dependence of indium electro de potential vs. log. concentration of indium (III) is linear and the slopes determined are comparable with the slopes calculated from the Nernst equation, assuming n = 3. The potential of In/ln(III) has been determined to be 0.805 ± 0.003 V with respect to Pt/PtC12 (1 M). At 693 K the free energy of formation of the indium(III) chloride in a 1 M solution is -32...

The role of indium in GaN and AlN films is investigated with the method of the perturbed angular correlation (PAC). Using the PAC probe 111In in addition to indium on substitutional cation sites a large fraction of probes is found in a distinctly different microscopic environment which was attributed to the formation of an indium nitrogen-vacancy (VN) complex. The influence of an electron captu...