نتایج جستجو برای: insulated gate bipolar transistor
تعداد نتایج: 95915 فیلتر نتایج به سال:
This paper present a MATLAB-SIMULINK model of a single phase 2.5 KVA, 240V RMS controlled PV VSI (Photovoltaic Voltage Source Inverter) inverter using IGBTs (Insulated Gate Bipolar Transistor). The behavior of output voltage, output current, and the total harmonic distortion (THD), with the variation in input dc blocking capacitor (Cdc), for linear and non-linear load has been analyzed. The val...
Loop heat pipes (LHPs) are used in many branches of industry, mainly for cooling of electrical elements and systems. The loop heat pipe is a vapour-liquid phase-change device that transfers heat from evaporator to condenser. One of the most important parts of the LHP is the porous wick structure. The wick structure provides capillary force to circulate the working fluid. To achieve good thermal...
This paper describes the mathematical modelling of selfexcited induction generators (SEIGs) with are improved electronic load controller (IELC) for microhydel applications supplying variety of loads. In small hydro plants, governor unit of turbine can be eliminated using IELC, which is simple and cost effective. The improved electronic load controller is a combination of a three-phase insulated...
This paper deals with the performance analysis of static compensator (STATCOM) based voltage regulator for self excited induction generators (SEIGs) supplying balanced/unbalanced and linear/non linear loads. A threephase insulated gate bipolar transistor (IGBT) based current controlled voltage source inverter (CC-VSI) known as STATCOM is used for harmonic elimination. It also provides the requi...
Mitsubishi Electric has developed new High Voltage Insulated Gate Bipolar Transistor (HV-IGBT) modules called the ‘R-Series’ with a high isolation package, which can be used with a wide operating temperature range from -50°C up to 150°C. The newly developed chip set achieves stable operation and high SOA capability over a wide temperature range. In addition the new package design is optimized f...
Three-Phase four-wire distribution systems are facing severe power quality problems such as poor voltage regulation, high reactive power and harmonics current burden, load unbalancing, excessive neutral current, etc.This creates excessive neutral current both of fundamental and harmonic frequency and the neutral conductor gets overloaded. By integrating phase shifting into an extremely low zero...
Solder layer void is one of the main failure causes power semiconductor devices, which will seriously affect reliability devices. In this study, a 3D model IGBT (Insulated Gate Bipolar Transistor) packaging was built by DesignModeler. Based on ANSYS Workbench, influence size, location, solder type, and thickness temperature distribution module simulated. The results show that larger radius, hig...
Abstract This paper proposes a voltage and frequency controller for a wind turbine-driven independent asynchronous generator. The proposed controller consists of IGBT (Insulated Gate Bipolar Transistor) based three phase voltage source converter along with battery energy storage system at its DC bus and it inherently adapts to the changes in the rotor speed while maintaining a near constant vol...
A method of expanding the 1700 MeV, 100 mA proton beam of the APT linear accelerator onto the 19 by 190 cm target has been devised using eight ferrite dipole magnets. These magnets deflect the beam in the x and y-plane, and thereby paint the target area uniformly with a rastered pattern. Insulated Gate Bipolar Transistor (IGBT)-based power modulators drive the raster magnets with triangular cur...
The development of power electronics technology is driven by the insatiate demand to control electrical power. The new power electronics devices reduce the volume of the converters by three to four orders of magnitude compared to their mercury arc predecessor. And the turn-on and turn-o0 time has decreased from milliseconds to the microseconds and even nanoseconds, depending on power level. The...
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