Related Articles Modulating the secondary electron emission coefficient at the base-collector interface of the plasma bipolar junction transistor Appl. Phys. Lett. 102, 083502 (2013) Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field J. Appl. Phys. 112, 123714 (2012) Suppr...

The Space Vector Pulse Width Modulation (SVPWM) is used for three phase bridge Inverter to produce AC output voltage of desired magnitude and frequency. The purpose of controller is to produce regulated output voltage with low distortion under varying load conditions. A triangular carrier based space vector pulse width modulation is developed in MATLAB using Xilinx block set and executed in Fie...

In this paper, we propose a novel method to improve the circuit simulation accuracy of insulated-gate bipolar transistor (IGBT) power devices under short-circuit state. To determine IGBT junction temperature, transient thermal resistance an device on order micro seconds is estimated by simulations. The saturation current without self-heating effects based test and resistance. SPICE parameter ex...

Related Articles An all C60 vertical transistor for high frequency and high current density applications APL: Org. Electron. Photonics 5, 250 (2012) Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors Appl. Phys. Lett. 101, 212104 (2012) Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxidesem...

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF...

High-quality single crystal diamond has been used to demonstrate the RF performance of hydrogenterminated diamond field effect transistors of varying gate lengths; this includes the first data on a sub100nm diamond transistor. The RF performance for 220nm, 120nm and 50nm gate length transistors was extracted and a cut-off frequency of 55 GHz was measured for the 50nm device. This is the highest...

We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P+ anode region, which would not degrade th...

Based on the understanding of flicker noise generation in “silicon metal-oxide semiconductor field-effect transistors” (MOSFETs), a novel method for improving the phase noise performance of a CMOS LC oscillator is presented. Zhou et al. and Hoogee have suggested that the 1 noise can be reduced through a switched gate, and the flicker noise generated is inversely proportional to the gate switchi...

Easy inter-connection is a crucial advantage of the single-chip power ICs, which makes devices with multiple ports easy to improve carrier controllability without increasing process difficulty. Electrical characteristics get further improved thanks advanced controllability. In this paper, silicon-on-isolator lateral IGBT (SOI-LIGBT) featured four hybrid gates proposed obtain outstanding in turn...