A comparative study of the drain breakdown phenomena in junctionless (JL) and inversion mode (IM) pchannel MOSFETs has been investigated experimentally with different VGS, channel widths, and VSUB. In order to explain the dependence of drain breakdown voltages (BVDS) on VGS, 3-D device simulation has been also performed. When the device is turned ON, the BVDS is larger in JL than IM transistors...
