We have performed density-matrix renormalization group studies of a square lattice $t$-$J$ model with small hole doping, $\delta\ll 1$, on long 4 and 6 leg cylinders. include frustration in the form second-neighbor exchange coupling, $J_2 = J_1/2$, such that undoped ($\delta=0$) "parent" state is quantum spin liquid. In contrast to relatively short range superconducting (SC) correlations been o...

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances o...

A weak localisation theory for a semiconductor quantum wire, which has a width of the order of the Fermi wavelength, is presented. In our model the electronic motion is essentially one-dimensional and the localisation length L, is much larger than the mean free path I , so that, in contrast to conventional theories a non-localised quantum wire with a total length L < L, but much larger than I i...

Quantitative ADF-STEM imaging paired with image simulations has proven to be a powerful technique for determining the three dimensional location of substitutionally doped atoms in thin films. Expansion of this technique to lightly-doped nanocrystals requires an understanding of the influence of specimen mistilt on dopant visibility due to the difficulty of accurate orientation determination in ...

In complete analogy to chiral perturbation theory, systematic low-energy effective theories can be used to describe the lightly doped antiferromagnetic precursors of high-temperature superconductors. The spinwaves or magnons are the Goldstone bosons of the spontaneously broken SU(2)s symmetry. The comparison of analytic effective field theory results at the two-loop level and Monte Carlo data o...

We demonstrate from our current-sensing atomic force microscopic studies that both electrical and topographical properties of electrochemically prepared polyaniline (PAn) films are affected by their preparation conditions. The electrical properties of the fully doped PAn films prepared in 0.30 M nitric acid with its pH and ionic strength adjusted to 0.50 can be described as a conductor with an ...

Controlling axial and radial dopant profiles in nanowires is of utmost importance for NW-based devices, as the formation of tightly controlled electrical junctions is crucial for optimization of device performance. Recently, inhomogeneous dopant profiles have been observed in vapor–liquid–solid grown nanowires, but the underlying mechanisms that produce these inhomogeneities have not been compl...

Tunnel field-effect transistors were fabricated from axially doped silicon nanowire p-n junctions grown via the vapor-liquid-solid method. Following dry thermal oxidation to form a gate dielectric shell, the nanowires have a p-n-n(+) doping profile with an abrupt n-n(+) junction, which was revealed by scanning capacitance microscopy. The lightly doped n-segment can be inverted to p(+) by modula...