نتایج جستجو برای: low band gap
تعداد نتایج: 1423945 فیلتر نتایج به سال:
A New Method for Calculating Propagation Modes of a One Dimensional Photonic Crystal (RESEARCH NOTE)
Photonic band-gap (PBG) crystals offer new dimensions of freedom in controlling propagation of electromagnetic waves. The existence of stop-bands in the transmission characteristic of these crystals makes them a suitable element for the realization of many useful microwave and optical subsystems. In this paper, we calculate the propagation constant of a one-dimensional (1-D) photonic crystal by...
By means of first principles calculations we show that both rutile and anatase phases of bulk TiO2 doped by S, Se or Pb can display substantial decreasing in the band gap (up to 50%), while doping by Zr does not sizably affect the band-gap value. Moreover, the absorption edge is shifted (up to 1 eV) to the lower energy range in the case of TiO2 doped by S or Pb that opens a way to enhancin...
In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...
Electronic properties of CaTiO3 crystal in paraelectric and ferroelectric phases have been studied by first principles, using Hohenberg-Kohn-Sham density functional theory (DFT). In paraelectric phase the results show an indirect band gap of about 2eV at -R direction in the Brilluoin zone and a strong hybridization between Ti-3d an O-2P orbital. In ferroelectric phase a direct band gap of abo...
This study reports a scalable and economical method to open a band gap in single layer graphene by deposition of cobalt metal on its surface using physical vapor deposition in high vacuum. At low cobalt thickness, clusters form at impurity sites on the graphene without etching or damaging the graphene. When exposed to oxygen at room temperature, oxygen functional groups form in proportion to th...
Thermophotovoltaic TPV devices are intended to absorb photons from hot blackbody radiating objects, often requiring semiconductor absorbers with band gap of 0.6 eV. The random InxGa1−xAs alloy lattice matched xIn=0.53 to a 001 InP substrate has a low-temperature band gap of 0.8 eV, about 0.2 eV too high for a TPV absorber. Bringing the band gap down by raising the In concentration induces strai...
Introduction: In this research, TiO2-Zr nano-photocatalyst was firstly developed with the aim of improving the photocatalytic activity of titanium dioxide via sol-gel method. The recovery of catalysts in acidic, alkaline and thermal conditions was also studied. Method: This research was done on a laboratory scale. The structures and properties were recognized with (BET), (FT-IR), (FE-SEM), and...
This study was an attempt to provide a simple solution processed synthesis route for Lead Selenide (PbSe) nanostructure thin films using the chemical bath deposition (CBD) method which is commercially available in inexpensive precursors. In the CBD method, the preparation parameters play a considerable role and determine the nature of the final product formed. Known as two main factors, the eff...
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Thin layers of ZnS in two different temperature conditions of 25 or 2000C and also with different thicknesses from 100nm to 600nm were prepared by physical vapor deposition. Absorption and also transmission spectra of the films were obtained to determine absorption coefficient, extinction constant and optical band gap of the films. It was found that by decreasing the substrate temperature or de...
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