نتایج جستجو برای: magnetoresistance
تعداد نتایج: 5071 فیلتر نتایج به سال:
It is proposed that the presence of a tilted and anisotropic Dirac cone can be verified using the interlayer magnetoresistance in the layered Dirac fermion system, which is realized in quasi-two-dimensional organic compound α-(BEDT-TTF)2 I3. Theoretical formula for the interlayer magnetoresistance is derived using the analytic Landau level wave functions and assuming local tunneling of electron...
The magnetotransport and magnetic properties of chemically ordered ~001! L10 FePt epitaxial thin films with small scale perpendicularly magnetized stripe domains have been investigated. Film growth conditions are used to systematically vary the degree of chemical order, the magnetic anisotropy, and magnetic domain sizes. The longitudinal and transverse ~Hall! resistivities are correlated with b...
We report on in situ magnetoresistance measurements of a 30-nm-wide ferromagnetic nanocontact with simultaneous magnetic imaging in the Lorentz transmission electron microscope. The magnetoresistive measurements are correlated with the micromagnetic configuration of the sample. This allows us to assign characteristic features in the magnetoresistance curves to different magnetic configurations ...
First-principles calculations of transmission and reflection from Ag/Fe, Au/Fe, Cu/Co, and Cu/Ni interfaces show very strong spin dependence that differs significantly from expectations based on free electron approximations. The results can be used to understand both the giant magnetoresistance and the oscillatory exchange coupling observed in magnetic multilayers of these materials. The spin d...
We report direct observations of anomalous magnetic-field and temperature dependences of the Shubnikov–de Haas oscillations in the organic superconductor b9-(BEDT-TTF)2SF5CH2CF2SO3. Unlike other BEDT-TTF based organic superconductors, a nonmetallic temperature dependence of the background magnetoresistance is clearly observed. It is speculated that the nonmetallic behavior may arise from a part...
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the low order sequential tunneling and co-tunneling regimes, a large magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when...
The bias and temperature dependent resistance and magnetoresistance of magnetic tunnel junctions with and without intentional shorts through the insulating barrier were studied. Based on the experimental results, a set of quality criteria was formulated that enables the identification of barrier shorts. While the temperature and bias dependencies of the junction resistance and of the fitted bar...
The electrostatic discharge (ESD) effect in GMR heads in the deshunting process is studied in order to prevent the damage in this process. The simulation and experiment results are investigated and compared. It is found from these results that sequences of deshunting process, currently operating, can cause the damage of GMR heads due to the ESD effect, based on the charged device model, CDM. Th...
J. A. De Toro,1,2,* J. P. Andrés,1 J. A. González,1 J. P. Goff,2 A. J. Barbero,1 and J. M. Riveiro1 1Departamento de Física Aplicada, Universidad de Castilla-La Mancha, 13071 Ciudad Real, Spain 2Department of Physics, University of Liverpool, Oliver Lodge Laboratory, Liverpool L69 7ZE, United Kingdom (Received 4 August 2004; revised manuscript received 9 September 2004; published 13 December 2004)
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