The dc and ac conductivities of Mn-doped ZnO were investigated at temperatures from 10 to 100 K. The temperature dependence of the dc conductivity from 10 to 100 K shows an abrupt change at ;18 K, manifesting a much lower activation energy for conduction below 18 K. From 10 to 18 K, the ac conductivity, sac(v), varies as sac(v)5Av s in the frequency range from 10 to 10 Hz with s in the range of...

A perfect control of nanostructure growth is a prerequisite for the development of electronic and optoelectronic device/systems. In this article, we demonstrate the growth of various ZnO-derived nanostructures, including well-ordered arrays of high aspect ratio single crystalline nanowires with preferred growth direction along the [0001] axis, nanowalls, and hybrid nanowire-nanowall structures....

Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemi...

Both ZnO and PZT Thin Film Bulk Acoustic Resonator filters were fabricated, tested and modeled in this study. The development of an accurate Mason model allows the effect of particular parasitic components on the microwave s-parameters in the region of the series and parallel resonances to be identified. The parasitic components that limit the performance of our ZnO and PbZr0.3Ti0.7O3 Thin Film...

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, a...