This paper reports the realization and RF modeling of flexible microwave P-type-Intrinsic-N-type (PIN) diodes using transferrable single-crystalline Si nanomembranes (SiNMs) that are monolithically integrated on low-cost, flexible plastic substrates. With high-energy, high-dose ion implantation and high-temperature annealing before nanomembrane release and transfer process, the parasitic parame...

The purpose of this report is to present the results of further investigations into the operation and design of two-dimensional Luneburg Lenses at 24 GHz, with the possibility for electronic control of their behavior. Various lens design techniques are illustrated; these include a holey dielectric lens (drilled dielectric) and, a holey plate lens (etched holes on the upper metal plate). Ray tra...

This article presents a frequency-modulated continuous wave (FMCW) harmonic radar in the 61-/122-GHz industrial, scientific, and medical (ISM) frequency bands. The is based on two self-designed monolithic microwave integrated circuits (MMICs) for transceiver (TRX) tag which are fabricated 130-nm SiGe BiCMOS technology. presented TRX-MMIC consists of fundamental voltage-controlled oscillator (VC...

As one of the major suppliers in the area of High Frequency (HF) components, the Siemens Semiconductor HF Product Division stands for a continuous commitment to innovative Technologies and Products combined with a volume strategy. The Siemens Technology and Product Roadmap is directed to complete RF system solutions and device kits as well as standard and custom specific components in enhanced ...

This work addresses the enormous efficiency and linearity potential of optimized AlGaN/GaN high-electron mobility transistors (HEMT) in conventional Doherty linear base-station amplifiers at 2.7 GHz. Supported by physical device simulation, the work further elaborates on the use of AlGaN/GaN HEMTs in high-speed current-switch-mode classD (CMCD)/class-S MMICs for data rates of up to 8 Gbit/s equ...

A well-documented MMIC design methodology ensures a much smoother and faster turnaround of circuits. Circuit designs along with information relating to layout, processing, and testing can be preserved and used for future applications, thereby eliminating duplication of effort and providing substantial time and cost savings. This will not only assure a well-controlled and repeatable environment,...

GaAs devices exhibit some general failure modes that can be attributed to a defined failure mechanism. The most common failure modes are observed via degradation of the MMIC parameters such as IDSS, gain, POUT, and others. The degradation observed in MMIC devices is normally a function of the material interactions and the environmental conditions during test or operation. The importance of a pa...

The results of our research on the electro-optical control of MMICs are shown in this paper. Two different devices have been investigated: a GaAs chip monolithic amplifier at S band, and an AlGaAs chip MMIC voltage controlled oscillator at Ku. The possibilities of optical control of the amplifier are evidenced as follows: if the amplifier operates with the same biasing, the gain can be opticall...

This paper presents enclosure effect comprehensive by 3D electromagnetic modeling, simulation and measurement of active MMIC with package/housing. When put inside a test box or package with a cavity, MMIC shows significant deviation from it RF On Wafer (RFOW) measurement data. Cavity resonance‟s adverse effects were analyzed by eigen mode solver using CST Microwave Studio and RFOW measurement a...