Medical dosimetry education occupies a specialized branch of allied health higher education. Noted international shortages of health care workers, reduced university funding, limitations on faculty staffing, trends in learner attrition, and increased enrollment of nontraditional students force medical dosimetry educational leadership to reevaluate current admission practices. Program officials ...

-The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.

A simple treatment of the nano-scale MOSFET in the spirit of the Landauer approach to transport in mesoscopic structures is described. First, the essential physics is illustrated by examining numerical simulations. Next, the analytical theory of the ballistic MOSFET is discussed, and finally, the role of scattering in nano-scale MOSFETs is discussed.

In this paper, a BSIMSOI RF gate resistance model for FDSOI MOSFET is introduced and verified. With the addition of the gate resistance model, the RF characteristic of FDSOI MOSFET could be modeled well. Self-heating effect (SHE) will affect RF data fitting significantly. A simple method to extract thermal resistance is proposed.

Background: The purpose of this study was to investigate the various gantry angle and SSD dependencies of TLD and MOSFET dosimeters. Materials and Methods: LiF (Mg) TLD and MOSFET were used in this study. Dosimeter systems were calibrated and then irradiated at various gantry angle and SSD by applying 6 MV photon energy. Results: Based on the results, MOSFET changes were found to be in 2% range...

Image segmentation is a fundamental image processing technique to extract the required information from an image. The core element of any integrated circuit (IC) chip for signal metal oxide semiconductor field effect transistor (MOSFET). There are various limitations MOSFET in sub-nm process technology. This work introduces application new type MOSFET, which known as spatial wave function switc...

This paper addresses the device physics of a novel vertical power MOSFET through detailed TCAD simulation. The simulated I-V and C-V characteristics match well with the measured data. The bias dependence of electrical potential near the recess trench is identified as the cause of a sharp drop in output capacitance against drain voltage. Index Terms — power MOSFET, output capacitance, TCAD

A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimizati...

In this paper, we solve the MOSFET RF circuit ordinary differential equations with the waveform relaxation method, monotone iterative method, and Runge-Kutta method. With the monotone iterative method, we prove each decoupled and transformed circuit equation converges monotonically. This method provides an alternative in the time domain numerical solution of MOSFET RF circuit equations.

In 1984 I had the honor of travelling around Europe with great Rudy Severns on a new technology teaching tour for Siliconix. was young applications engineer and then silicon power MOSFET. Engineers were using bipolar transistors in their switching supplies, his “Advanced Power MOSFET Seminar” pointed out many advantages (Si) MOSFET, which offered higher frequencies lower losses. discussed how t...